NTD4302
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onsemi NTD4302

Manufacturer No:
NTD4302
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 30V 8.4A/68A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The NTD4302 is a high-performance N-Channel power MOSFET manufactured by onsemi. This device is designed for applications requiring high current handling and low on-state resistance. The NTD4302 is available in DPAK and IPAK packages, making it suitable for a variety of surface mount and through-hole applications. With its ultra-low RDS(on) and high efficiency, this MOSFET is ideal for extending battery life in portable and battery-powered products.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Drain-to-Source Voltage VDSS - - 30 Vdc
Gate-to-Source Voltage - Continuous VGS - - ±20 Vdc
Continuous Drain Current @ TC = 25°C ID - - 68 A
Static Drain-Source On-State Resistance RDS(on) - 0.0078 0.013 Ω
Gate Threshold Voltage VGS(th) 1.0 - 3.0 Vdc
Maximum Junction Temperature TJ - - 150 °C
Total Power Dissipation @ TC = 25°C PD - - 75 W
Maximum Lead Temperature for Soldering TL - - 260 °C

Key Features

  • Ultra Low RDS(on): Ensures high efficiency and minimal power loss.
  • Higher Efficiency Extending Battery Life: Ideal for battery-powered devices.
  • Logic Level Gate Drive: Simplifies control circuitry.
  • Diode Exhibits High Speed, Soft Recovery: Reduces switching losses and EMI.
  • Avalanche Energy Specified: Enhances reliability under transient conditions.
  • IDSS Specified at Elevated Temperature: Ensures stable operation across a wide temperature range.
  • Pb-Free and RoHS Compliant: Meets environmental regulations.

Applications

  • DC-DC Converters: High efficiency and low RDS(on) make it suitable for power conversion applications.
  • Low Voltage Motor Control: Handles high current and provides efficient motor control.
  • Power Management in Portable and Battery Powered Products: Ideal for devices such as computers, printers, cellular and cordless telephones, and PCMCIA cards.

Q & A

  1. What is the maximum drain-to-source voltage of the NTD4302 MOSFET?

    The maximum drain-to-source voltage (VDSS) is 30 Vdc.

  2. What is the typical on-state resistance (RDS(on)) of the NTD4302?

    The typical RDS(on) is 0.0078 Ω at VGS = 10 Vdc and ID = 20 A.

  3. What are the package options for the NTD4302 MOSFET?

    The NTD4302 is available in DPAK and IPAK packages.

  4. What is the maximum continuous drain current of the NTD4302?

    The maximum continuous drain current (ID) is 68 A at TC = 25°C.

  5. Is the NTD4302 MOSFET RoHS compliant?
  6. What are some typical applications of the NTD4302 MOSFET?

    Typical applications include DC-DC converters, low voltage motor control, and power management in portable and battery-powered products.

  7. What is the gate threshold voltage (VGS(th)) of the NTD4302?

    The gate threshold voltage (VGS(th)) ranges from 1.0 V to 3.0 V.

  8. What is the maximum junction temperature (TJ) of the NTD4302?

    The maximum junction temperature (TJ) is 150°C.

  9. What is the total power dissipation (PD) of the NTD4302 at TC = 25°C?

    The total power dissipation (PD) is 75 W at TC = 25°C.

  10. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.4A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):1.04W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
NTD4302
NTD4302
MOSFET N-CH 30V 8.4A/68A DPAK

Similar Products

Part Number NTD4302 NTD4302G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Ta), 68A (Tc) 8.4A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 20A, 10V 10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 24 V 2400 pF @ 24 V
FET Feature - -
Power Dissipation (Max) 1.04W (Ta), 75W (Tc) 1.04W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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