NTD4302G
  • Share:

onsemi NTD4302G

Manufacturer No:
NTD4302G
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 30V 8.4A/68A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD4302G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-state resistance. It is available in both DPAK and IPAK packages, making it versatile for various mounting needs. The NTD4302G is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 30 Vdc
Gate-to-Source Voltage - Continuous VGS ±20 Vdc
Thermal Resistance - Junction-to-Case Rthjc - -
Total Power Dissipation @ TC = 25°C Pd - -
Continuous Drain Current @ TC = 25°C ID 68 A A
Gate Threshold Voltage VGS(th) 1.0 - 3.0 Vdc
Static Drain-Source On-State Resistance RDS(on) 0.0078 Ω (Typ @ VGS = 10 V, ID = 20 A) Ω
Maximum Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Ultra Low RDS(on)
  • Higher Efficiency Extending Battery Life
  • Logic Level Gate Drive
  • Diode Exhibits High Speed, Soft Recovery
  • Avalanche Energy Specified
  • IDSS Specified at Elevated Temperature
  • Pb-free and RoHS Compliant

Applications

  • DC-DC Converters
  • Low Voltage Motor Control
  • Power Management in Portable and Battery Powered Products:
    • Computers
    • Printers
    • Cellular and Cordless Telephones
    • PCMCIA Cards

Q & A

  1. What is the maximum drain-to-source voltage of the NTD4302G?

    The maximum drain-to-source voltage (VDSS) is 30 Vdc.

  2. What is the typical on-state resistance of the NTD4302G?

    The typical static drain-source on-state resistance (RDS(on)) is 0.0078 Ω at VGS = 10 V and ID = 20 A.

  3. What are the package options for the NTD4302G?

    The NTD4302G is available in both DPAK and IPAK packages.

  4. Is the NTD4302G RoHS compliant?
  5. What is the maximum continuous drain current of the NTD4302G?

    The maximum continuous drain current (ID) is 68 A at TC = 25°C.

  6. What are some typical applications of the NTD4302G?

    Typical applications include DC-DC converters, low voltage motor control, and power management in portable and battery-powered products.

  7. What is the gate threshold voltage range of the NTD4302G?

    The gate threshold voltage (VGS(th)) ranges from 1.0 to 3.0 Vdc.

  8. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260°C.

  9. Does the NTD4302G have a high speed, soft recovery diode?
  10. Is the NTD4302G suitable for logic level gate drive?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.4A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):1.04W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.42
125

Please send RFQ , we will respond immediately.

Same Series
NTD4302-1G
NTD4302-1G
MOSFET N-CH 30V 8.4A/68A IPAK
NTD4302G
NTD4302G
MOSFET N-CH 30V 8.4A/68A DPAK

Similar Products

Part Number NTD4302G NTD4302
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Ta), 68A (Tc) 8.4A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 20A, 10V 10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 24 V 2400 pF @ 24 V
FET Feature - -
Power Dissipation (Max) 1.04W (Ta), 75W (Tc) 1.04W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC