NTD4302-1G
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onsemi NTD4302-1G

Manufacturer No:
NTD4302-1G
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 30V 8.4A/68A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD4302-1G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-state resistance. It is available in both DPAK and IPAK packages, making it versatile for various mounting needs. The NTD4302-1G is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 30 Vdc
Gate-to-Source Voltage - Continuous VGS ±20 Vdc
Continuous Drain Current @ TC = 25°C ID 68 A
Static Drain-Source On-Resistance @ VGS = 10 Vdc, ID = 20 A RDS(on) 0.0078
Gate Threshold Voltage VGS(th) 1.0 - 3.0 Vdc
Maximum Lead Temperature for Soldering TL 260 °C
Avalanche Energy EAS 722 mJ

Key Features

  • Ultra Low RDS(on)
  • Higher Efficiency Extending Battery Life
  • Logic Level Gate Drive
  • Diode Exhibits High Speed, Soft Recovery
  • Avalanche Energy Specified
  • IDSS Specified at Elevated Temperature
  • DPAK Mounting Information Provided
  • Pb-free and RoHS Compliant

Applications

  • DC-DC Converters
  • Low Voltage Motor Control
  • Power Management in Portable and Battery Powered Products:
    • Computers
    • Printers
    • Cellular and Cordless Telephones
    • PCMCIA Cards

Q & A

  1. What is the maximum drain-to-source voltage of the NTD4302-1G?

    The maximum drain-to-source voltage (VDSS) is 30 Vdc.

  2. What is the typical on-state resistance of the NTD4302-1G?

    The typical static drain-source on-state resistance (RDS(on)) is 0.0078 mΩ at VGS = 10 Vdc and ID = 20 A.

  3. What are the package options for the NTD4302-1G?

    The NTD4302-1G is available in both DPAK and IPAK packages.

  4. Is the NTD4302-1G RoHS compliant?
  5. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current at 25°C is 68 A.

  6. What are the typical applications of the NTD4302-1G?

    The NTD4302-1G is typically used in DC-DC converters, low voltage motor control, and power management in portable and battery-powered products.

  7. What is the gate threshold voltage range of the NTD4302-1G?

    The gate threshold voltage (VGS(th)) range is 1.0 to 3.0 Vdc.

  8. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 260°C.

  9. Does the NTD4302-1G have specified avalanche energy?
  10. What is the significance of the diode's high speed, soft recovery feature?

    The diode's high speed, soft recovery feature enhances the overall efficiency and reduces switching losses in the device.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.4A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):1.04W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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In Stock

$0.22
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Same Series
NTD4302-1G
NTD4302-1G
MOSFET N-CH 30V 8.4A/68A IPAK
NTD4302G
NTD4302G
MOSFET N-CH 30V 8.4A/68A DPAK

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