Overview
The NTBG080N120SC1 is a high-performance N-Channel Silicon Carbide (SiC) MOSFET produced by onsemi. This device is part of the EliteSiC family, known for its fast switching and rugged design. The NTBG080N120SC1 offers significant advantages over traditional silicon MOSFETs, including higher blocking voltage, higher thermal conductivity, and lower on-state resistance. These characteristics make it ideal for applications requiring high efficiency, compact design, and reliable operation in high-temperature environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Breakdown Voltage (VBR(DSS)) | 1200 | V |
| Continuous Drain Current (ID) | 30 | A |
| On-State Resistance (RDS(on)) | 40 | mΩ |
| Gate Threshold Voltage (VGS(TH)) | VGS = VDS, ID = 5 mA | - |
| Input Capacitance (CISS) | VGS = 0 V, f = 1 MHz | - |
| Maximum Junction Temperature (TJ(max)) | 175 | °C |
| Package Type | D2PAK-7L (TO-263-7L HV) | - |
Key Features
- High Blocking Voltage: 1200 V, making it suitable for high-voltage applications.
- Low On-State Resistance: 40 mΩ, which reduces power losses and increases efficiency.
- High Thermal Conductivity: Better heat dissipation compared to silicon MOSFETs.
- Fast Switching: Enables high-frequency operation and reduces switching losses.
- Compact Design: Smaller component size due to reduced need for inductors and filters.
- High-Temperature Operation: Can operate efficiently in high-temperature environments up to 175°C.
Applications
- Power Supplies: High-efficiency power supplies, including DC-DC converters and AC-DC converters.
- Motor Drives: Electric vehicle drives, industrial motor drives, and servo drives.
- Renewable Energy Systems: Solar inverters, wind turbine inverters, and energy storage systems.
- Industrial Power Systems: Uninterruptible power supplies (UPS), power factor correction (PFC), and other industrial power applications.
Q & A
- What is the NTBG080N120SC1 MOSFET used for?
The NTBG080N120SC1 is used in high-performance applications requiring high efficiency, fast switching, and rugged design, such as power supplies, motor drives, renewable energy systems, and industrial power systems.
- What are the key advantages of using SiC MOSFETs over silicon MOSFETs?
SIC MOSFETs offer higher blocking voltage, higher thermal conductivity, lower on-state resistance, and the ability to operate at higher temperatures and switching frequencies.
- What is the maximum drain current of the NTBG080N120SC1?
The maximum continuous drain current is 30 A.
- What is the on-state resistance of the NTBG080N120SC1?
The on-state resistance (RDS(on)) is 40 mΩ.
- What is the maximum junction temperature for the NTBG080N120SC1?
The maximum junction temperature is 175°C.
- In what package is the NTBG080N120SC1 available?
The NTBG080N120SC1 is available in the D2PAK-7L (TO-263-7L HV) package.
- Why is the NTBG080N120SC1 beneficial for high-frequency applications?
It is beneficial due to its fast switching capabilities, which reduce switching losses and enable high-frequency operation.
- How does the NTBG080N120SC1 contribute to compact system design?
It contributes by reducing the need for larger inductors and filters, allowing for a more compact system design.
- What are some common applications for the NTBG080N120SC1 in renewable energy systems?
Common applications include solar inverters, wind turbine inverters, and energy storage systems.
- Is the NTBG080N120SC1 suitable for high-voltage applications?
Yes, it is suitable with a drain-to-source breakdown voltage of 1200 V.
