Overview
The NTBG040N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET produced by onsemi, part of their EliteSiC family. This device is designed to offer high efficiency, rugged performance, and compact size. It features a drain-to-source on-resistance of 40 mΩ and can handle high voltages up to 1200 V, making it suitable for a variety of power management applications. The MOSFET is packaged in a D2PAK-7L case and is RoHS compliant with exemption 7a, Pb-Free 2LI (on second level interconnection).
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 1200 | V |
| Gate-to-Source Voltage | VGS | +25/−15 | V |
| Continuous Drain Current (TC = 25°C) | ID | 60 | A |
| Continuous Drain Current (TC = 100°C) | ID | 43 | A |
| Pulsed Drain Current (TA = 25°C) | IDM | 240 | A |
| Power Dissipation (TC = 25°C) | PD | 357 | W |
| Power Dissipation (TC = 100°C) | PD | 178 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance | RDS(on) | 40 mΩ (Typical at VGS = 20 V, ID = 35 A, TJ = 25°C) | mΩ |
| Thermal Resistance Junction-to-Case | RθJC | 0.42 | °C/W |
| Thermal Resistance Junction-to-Ambient | RθJA | 40 | °C/W |
Key Features
- Low On-Resistance: Typical RDS(on) of 40 mΩ at VGS = 20 V, ID = 35 A, and TJ = 25°C.
- Ultra Low Gate Charge: Total gate charge QG(tot) of 106 nC.
- Low Effective Output Capacitance: Typical Coss of 139 pF.
- High Temperature Operation: Junction temperature up to 175°C.
- Avalanche Tested: 100% avalanche tested.
- RoHS Compliant: Halide free and RoHS compliant with exemption 7a, Pb-Free 2LI (on second level interconnection).
- High Efficiency and Compact Size: Benefits from high efficiency, reduced system size, and cost due to the use of Silicon Carbide technology.
Applications
- UPS (Uninterruptible Power Supplies): Suitable for high-reliability power backup systems.
- DC-DC Converters: Ideal for high-efficiency power conversion applications.
- Boost Inverters: Used in power inverter systems requiring high voltage and current handling).
Q & A
- What is the maximum drain-to-source voltage of the NTBG040N120SC1 MOSFET?
The maximum drain-to-source voltage is 1200 V).
- What is the typical on-resistance of the NTBG040N120SC1 MOSFET?
The typical on-resistance is 40 mΩ at VGS = 20 V, ID = 35 A, and TJ = 25°C).
- What is the maximum continuous drain current at 25°C?
The maximum continuous drain current at 25°C is 60 A).
- What is the thermal resistance junction-to-case of the NTBG040N120SC1?
The thermal resistance junction-to-case is 0.42 °C/W).
- Is the NTBG040N120SC1 RoHS compliant?
Yes, it is halide free and RoHS compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)).
- What are the typical applications of the NTBG040N120SC1 MOSFET?
Typical applications include UPS, DC-DC converters, and boost inverters).
- What is the maximum operating junction temperature of the NTBG040N120SC1?
The maximum operating junction temperature is 175°C).
- What is the total gate charge of the NTBG040N120SC1 MOSFET?
The total gate charge QG(tot) is 106 nC).
- What is the package type of the NTBG040N120SC1 MOSFET?
The package type is D2PAK-7L).
- Is the NTBG040N120SC1 100% avalanche tested?
Yes, the device is 100% avalanche tested).
