Overview
The NTBG020N120SC1 is a Silicon Carbide (SiC) MOSFET from onsemi, part of their EliteSiC series. This device utilizes advanced SiC technology to offer superior switching performance and higher reliability compared to traditional silicon MOSFETs. Key benefits include low ON resistance, ultra-low gate charge, and high junction temperature tolerance, leading to increased efficiency, faster operation frequencies, and reduced system size and EMI.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Type | N-Channel |
| Blocking Voltage (BVDSS) | 1200 V |
| Continuous Drain Current (ID) | 98 A (at Tc) |
| Drain Source On-State Resistance (RDS(on)) | 20 mΩ (at 25°C) |
| Total Gate Charge (Qg) | 220 nC |
| Output Capacitance | 258 pF |
| Junction Temperature (Tj) | 175°C |
| Package Type | D2PAK-7L (TO-263-7L HV) |
Key Features
- Low On Resistance: 20 mΩ at 25°C, ensuring minimal energy loss.
- Ultra Low Gate Charge: 220 nC, facilitating faster switching times.
- High Junction Temperature: Operates efficiently up to 175°C.
- High UIS, Surge Current, and Avalanche Capability: Enhanced robustness against transient events.
- Compact Design: Smaller component size due to the inherent properties of SiC technology.
- High Efficiency and Reduced EMI: Leads to higher system efficiency and reduced electromagnetic interference.
Applications
- DC-DC Converters: Ideal for high-efficiency power conversion.
- Boost Inverters: Suitable for applications requiring high voltage and efficiency.
- Solar Systems: Enhances the efficiency of solar power systems.
- Charging Stations: Used in electric vehicle charging infrastructure for fast and efficient charging.
- Motor Drives: Improves the performance and efficiency of motor drive systems.
- AUX Power Supplies: Provides reliable and efficient power supply solutions.
Q & A
- What is the blocking voltage of the NTBG020N120SC1 MOSFET?
The blocking voltage (BVDSS) is 1200 V.
- What is the continuous drain current rating of the NTBG020N120SC1?
The continuous drain current (ID) is 98 A at Tc.
- What is the typical on-state resistance of the NTBG020N120SC1 at 25°C?
The typical on-state resistance (RDS(on)) is 20 mΩ at 25°C.
- What is the total gate charge of the NTBG020N120SC1?
The total gate charge (Qg) is 220 nC.
- What is the maximum junction temperature of the NTBG020N120SC1?
The maximum junction temperature (Tj) is 175°C.
- In what package is the NTBG020N120SC1 available?
The NTBG020N120SC1 is available in the D2PAK-7L (TO-263-7L HV) package.
- What are some of the key applications for the NTBG020N120SC1?
Key applications include DC-DC converters, boost inverters, solar systems, charging stations, motor drives, and AUX power supplies.
- How does the NTBG020N120SC1 compare to traditional silicon MOSFETs?
The NTBG020N120SC1 offers superior switching performance, higher reliability, lower on-state resistance, and higher thermal conductivity compared to traditional silicon MOSFETs.
- What are the benefits of using SiC MOSFETs like the NTBG020N120SC1?
Benefits include higher efficiency, faster operation frequencies, increased power density, reduced EMI, and a more compact system size.
- Is the NTBG020N120SC1 suitable for high-temperature environments?
Yes, the NTBG020N120SC1 can operate efficiently in high-temperature environments up to 175°C.
