Overview
The NTA4153NT1G is a single N-channel MOSFET produced by onsemi, designed for small signal applications. This MOSFET operates in enhancement mode and is known for its low on-resistance and high efficiency. It features a maximum drain-to-source voltage of 20V and a continuous drain current of 915mA. The device is packaged in a SC-75/SOT-416 package, which is lead-free and suitable for surface mount assembly. The NTA4153NT1G is also ESD protected, making it robust against electrostatic discharge.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| FET Type | N-Channel | |
| No of Channels | 1 | |
| Drain-to-Source Voltage (Vdss) | 20 | V |
| Drain-Source On Resistance-Max (RDS(on)) | 950 | mΩ |
| Rated Power Dissipation | 300 | mW |
| Gate Charge (Qg) | 1.82 | nC |
| Gate-Source Voltage-Max (Vgss) | ±6 | V |
| Drain Current | 915 | mA |
| Turn-on Delay Time | 3.7 | ns |
| Turn-off Delay Time | 25 | ns |
| Rise Time | 4.4 | ns |
| Fall Time | 7.6 | ns |
| Operating Temperature Range | -55°C to +150°C | |
| Gate Source Threshold Voltage | 1.1 | V |
| Technology | Silicon | |
| Package Style | SC-75/SOT-416 | |
| Mounting Method | Surface Mount |
Key Features
- Low On-Resistance: The NTA4153NT1G features a low drain-to-source on-resistance (RDS(on)) of up to 950 mΩ, improving system efficiency.
- Low Threshold Voltage: With a gate-source threshold voltage of 1.1 V, this MOSFET is suitable for low-voltage applications.
- ESD Protection: The device includes built-in ESD protection, enhancing its robustness against electrostatic discharge.
- Pb-Free Package: The SC-75/SOT-416 package is lead-free, making it compliant with environmental regulations.
- Wide Operating Temperature Range: The MOSFET operates over a temperature range of -55°C to +150°C, making it suitable for a variety of applications.
Applications
- Load/Power Switches: Ideal for switching applications where low on-resistance and high efficiency are required.
- Power Supply Converter Circuits: Used in power supply circuits to improve efficiency and reduce power losses.
- Battery Management: Suitable for battery management systems in portable devices.
- Portable Electronics: Commonly used in cell phones, PDAs, digital cameras, and pagers due to its small size and low power consumption.
Q & A
- What is the maximum drain-to-source voltage of the NTA4153NT1G MOSFET?
The maximum drain-to-source voltage is 20V.
- What is the continuous drain current rating of the NTA4153NT1G?
The continuous drain current rating is 915mA.
- What is the typical on-resistance of the NTA4153NT1G?
The typical on-resistance (RDS(on)) is up to 950 mΩ.
- Does the NTA4153NT1G have ESD protection?
Yes, the device includes built-in ESD protection.
- What is the operating temperature range of the NTA4153NT1G?
The operating temperature range is -55°C to +150°C.
- What type of package does the NTA4153NT1G come in?
The device is packaged in a SC-75/SOT-416 package.
- Is the NTA4153NT1G lead-free?
Yes, the package is lead-free.
- What are some common applications of the NTA4153NT1G?
Common applications include load/power switches, power supply converter circuits, battery management, and portable electronics.
- What is the gate-source threshold voltage of the NTA4153NT1G?
The gate-source threshold voltage is 1.1 V.
- How is the NTA4153NT1G mounted?
The device is mounted using surface mount technology.
