NTA4151PT1H
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onsemi NTA4151PT1H

Manufacturer No:
NTA4151PT1H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 760MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTA4151PT1H is a small signal MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) produced by onsemi. This P-channel MOSFET is designed for low-power applications and is known for its compact package and efficient performance. The device is housed in a SC-75 (SOT-416) package, making it suitable for space-constrained designs. It is also RoHS3 compliant, ensuring environmental sustainability.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)20 V
Continuous Drain Current (Id) @ 25°C760 mA
Drain-Source Resistance (Rds On)1 Ω
Gate-Source Voltage (Vgs)-20 V to 10 V (typical range)
PackageSC-75, SOT-416
RoHS StatusRoHS3 Compliant

Key Features

  • P-channel MOSFET for low-power applications
  • Compact SC-75 (SOT-416) package
  • Low on-resistance (Rds On) of 1 Ω
  • Continuous drain current of 760 mA at 25°C
  • Drain-source breakdown voltage of 20 V
  • RoHS3 compliant for environmental sustainability

Applications

The NTA4151PT1H is suitable for various low-power applications, including:

  • Switching circuits
  • Amplifier circuits
  • Voltage regulators
  • Audio and video equipment
  • Consumer electronics

Q & A

  1. What is the drain-source breakdown voltage of the NTA4151PT1H?
    The drain-source breakdown voltage (Vds) is 20 V.
  2. What is the continuous drain current of the NTA4151PT1H at 25°C?
    The continuous drain current (Id) at 25°C is 760 mA.
  3. What is the on-resistance (Rds On) of the NTA4151PT1H?
    The on-resistance (Rds On) is 1 Ω.
  4. In what package is the NTA4151PT1H available?
    The NTA4151PT1H is available in the SC-75 (SOT-416) package.
  5. Is the NTA4151PT1H RoHS compliant?
    Yes, the NTA4151PT1H is RoHS3 compliant.
  6. What are some typical applications of the NTA4151PT1H?
    Typical applications include switching circuits, amplifier circuits, voltage regulators, audio and video equipment, and consumer electronics.
  7. What is the gate-source voltage range for the NTA4151PT1H?
    The gate-source voltage (Vgs) range is typically from -20 V to 10 V.
  8. Why is the SC-75 package beneficial?
    The SC-75 package is beneficial due to its compact size, making it suitable for space-constrained designs.
  9. How does the NTA4151PT1H contribute to environmental sustainability?
    The NTA4151PT1H is RoHS3 compliant, which ensures it meets environmental sustainability standards.
  10. Where can I find detailed specifications for the NTA4151PT1H?
    Detailed specifications can be found in the datasheet available on the manufacturer's website or through distributors like Mouser, Digi-Key, and others.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:760mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:360mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.1 nC @ 4.5 V
Vgs (Max):±6V
Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):301mW (Tj)
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SC-75, SOT-416
Package / Case:SC-75, SOT-416
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Same Series
NTA4151PT1G
NTA4151PT1G
MOSFET P-CH 20V 760MA SC75
NTA4151PT1H
NTA4151PT1H
MOSFET P-CH 20V 760MA SC75
NTA4151PT1
NTA4151PT1
MOSFET P-CH 20V 760MA SC75

Similar Products

Part Number NTA4151PT1H NTA4151PT1 NTA4151PT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 760mA (Tj) 760mA (Tj) 760mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 360mOhm @ 350mA, 4.5V 360mOhm @ 350mA, 4.5V 360mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.1 nC @ 4.5 V 2.1 nC @ 4.5 V 2.1 nC @ 4.5 V
Vgs (Max) ±6V ±6V ±6V
Input Capacitance (Ciss) (Max) @ Vds 156 pF @ 5 V 156 pF @ 5 V 156 pF @ 5 V
FET Feature - - -
Power Dissipation (Max) 301mW (Tj) 301mW (Tj) 301mW (Tj)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416
Package / Case SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416

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