NTA4151PT1G
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onsemi NTA4151PT1G

Manufacturer No:
NTA4151PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 760MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTA4151PT1G is a single, P-Channel, small signal MOSFET produced by onsemi. This device is designed for high efficiency and reliability in various electronic applications. It features a low RDS(on) for higher efficiency and longer battery life, making it suitable for battery-operated systems. The MOSFET is available in the SC-75 package, which is a small outline package measuring 1.6 x 1.6 mm, and is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

Key Specifications

Parameter Symbol Value Units
Drain-to-Source Voltage VDSS -20 V
Gate-to-Source Voltage VGS ±6.0 V
Continuous Drain Current ID -760 mA
Power Dissipation (Steady State) PD 301 (SC-75), 313 (SC-89) mW
Pulsed Drain Current IDM ±1000 mA
Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C
Continuous Source Current (Body Diode) IS -250 mA
Lead Temperature for Soldering Purposes TL 260 °C
Gate-to-Source ESD Rating (Human Body Model) ESD 1800 V
Junction-to-Ambient Thermal Resistance (Steady State) RJA 415 (SC-75), 400 (SC-89) °C/W
Drain-to-Source On Resistance RDS(on) 0.26 @ -4.5 V, 0.35 @ -2.5 V, 0.49 @ -1.8 V Ω

Key Features

  • Low RDS(on) for higher efficiency and longer battery life
  • Small Outline Package (1.6 x 1.6 mm) in SC-75 and SC-89 packages
  • ESD protected gate
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant

Applications

  • High side load switch
  • DC-DC conversion
  • Small drive circuits
  • Battery operated systems such as cell phones, PDAs, digital cameras, etc.

Q & A

  1. What is the maximum drain-to-source voltage of the NTA4151PT1G?

    The maximum drain-to-source voltage (VDSS) is -20 V.

  2. What is the continuous drain current rating of the NTA4151PT1G?

    The continuous drain current (ID) is -760 mA.

  3. What are the package options for the NTA4151PT1G?

    The device is available in SC-75 and SC-89 packages.

  4. Is the NTA4151PT1G RoHS compliant?
  5. What is the typical on-resistance of the NTA4151PT1G?

    The typical on-resistance (RDS(on)) is 0.26 Ω at VGS = -4.5 V, 0.35 Ω at VGS = -2.5 V, and 0.49 Ω at VGS = -1.8 V.

  6. What are some common applications for the NTA4151PT1G?
  7. What is the operating junction temperature range for the NTA4151PT1G?

    The operating junction temperature range is -55°C to 150°C.

  8. What is the gate-to-source ESD rating of the NTA4151PT1G?

    The gate-to-source ESD rating is 1800 V (Human Body Model).

  9. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C.

  10. How does the NTA4151PT1G contribute to battery life in devices?

    The low RDS(on) of the NTA4151PT1G contributes to higher efficiency and longer battery life in battery-operated systems.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:760mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:360mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.1 nC @ 4.5 V
Vgs (Max):±6V
Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):301mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75, SOT-416
Package / Case:SC-75, SOT-416
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In Stock

$0.43
2,174

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Same Series
NTE4151PT1G
NTE4151PT1G
MOSFET P-CH 20V 760MA SC89-3
NTA4151PT1H
NTA4151PT1H
MOSFET P-CH 20V 760MA SC75
NTA4151PT1
NTA4151PT1
MOSFET P-CH 20V 760MA SC75

Similar Products

Part Number NTA4151PT1G NTA4151PT1H NTA4151PT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 760mA (Tj) 760mA (Tj) 760mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 360mOhm @ 350mA, 4.5V 360mOhm @ 350mA, 4.5V 360mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.1 nC @ 4.5 V 2.1 nC @ 4.5 V 2.1 nC @ 4.5 V
Vgs (Max) ±6V ±6V ±6V
Input Capacitance (Ciss) (Max) @ Vds 156 pF @ 5 V 156 pF @ 5 V 156 pF @ 5 V
FET Feature - - -
Power Dissipation (Max) 301mW (Tj) 301mW (Tj) 301mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416
Package / Case SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416

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