Overview
The NTE4151PT1G is a single, P-Channel, small signal MOSFET produced by onsemi. This device is designed for high efficiency and reliability in various electronic applications. It features a low RDS(on) for higher efficiency and longer battery life, making it suitable for battery-operated systems. The MOSFET is available in the SC-89 package, which is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | −20 | V |
| Gate-to-Source Voltage | VGS | ±6.0 | V |
| Continuous Drain Current | ID | −760 | mA |
| Power Dissipation (Steady State) | PD | 313 | mW |
| Pulsed Drain Current | IDM | ±1000 | mA |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to 150 | °C |
| Continuous Source Current (Body Diode) | IS | −250 | mA |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Gate-to-Source ESD Rating (Human Body Model) | ESD | 1800 | V |
| Junction-to-Ambient Thermal Resistance | RJA | 400 | °C/W |
| Gate Threshold Voltage | VGS(TH) | −0.45 to −1.2 | V |
| Drain-to-Source On Resistance | RDS(on) | 0.26 to 0.36 Ω @ VGS = −4.5 V, ID = −350 mA | Ω |
Key Features
- Low RDS(on) for higher efficiency and longer battery life
- Small Outline Package (SC-89: 1.6 x 0.85 x 0.70 mm)
- ESD protected gate
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant
Applications
- High side load switch
- DC-DC conversion
- Small drive circuits
- Battery operated systems such as cell phones, PDAs, digital cameras, etc.
Q & A
- What is the maximum drain-to-source voltage of the NTE4151PT1G?
The maximum drain-to-source voltage (VDSS) is −20 V.
- What is the continuous drain current rating of the NTE4151PT1G?
The continuous drain current (ID) is −760 mA.
- What are the operating junction and storage temperatures for the NTE4151PT1G?
The operating junction and storage temperatures (TJ, TSTG) range from −55°C to 150°C.
- Is the NTE4151PT1G RoHS compliant?
- What are some typical applications of the NTE4151PT1G?
Typical applications include high side load switch, DC-DC conversion, small drive circuits, and battery-operated systems.
- What is the gate threshold voltage range of the NTE4151PT1G?
The gate threshold voltage (VGS(TH)) ranges from −0.45 V to −1.2 V.
- What is the typical drain-to-source on resistance of the NTE4151PT1G?
The typical drain-to-source on resistance (RDS(on)) is 0.26 Ω to 0.36 Ω at VGS = −4.5 V and ID = −350 mA.
- What is the maximum power dissipation of the NTE4151PT1G in the SC-89 package?
The maximum power dissipation (PD) in the SC-89 package is 313 mW.
- What is the ESD rating of the NTE4151PT1G?
The gate-to-source ESD rating is 1800 V (Human Body Model).
- What is the junction-to-ambient thermal resistance of the NTE4151PT1G in the SC-89 package?
The junction-to-ambient thermal resistance (RJA) is 400 °C/W.
