Overview
The MTP2P50EG is a P-Channel Power MOSFET transistor manufactured by ON Semiconductor. This device is designed for high-voltage, high-speed switching applications, making it a versatile component for various power management and control scenarios. It features a drain-source voltage (VDS) of 500V and a continuous drain current of 2A, which makes it suitable for use in power supplies, converters, PWM motor controls, and bridge circuits.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 500 | Vdc |
| Drain Current - Continuous | ID | 2.0 | A |
| Drain Current - Continuous @ 100°C | ID | 1.6 | A |
| Drain Current - Single Pulse (tp ≤ 10 μs) | IDM | 6.0 | A |
| Gate-Source Voltage - Continuous | VGS | ±20 | Vdc |
| Gate-Source Voltage - Non-Repetitive (tp ≤ 10 ms) | VGSM | ±40 | Vpk |
| Total Power Dissipation | PD | 75 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 150 | °C |
| Thermal Resistance - Junction-to-Case | RθJC | 1.67 | °C/W |
| Thermal Resistance - Junction-to-Ambient | RθJA | 62.5 | °C/W |
| Maximum Lead Temperature for Soldering | TL | 260 | °C |
| Static Drain-Source On-Resistance | RDS(on) | 4.5 - 6.0 | Ω |
Key Features
- Robust High Voltage Termination: The MTP2P50EG uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
- Avalanche Energy Specified: Designed to withstand high energy in avalanche and commutation modes.
- Source-to-Drain Diode Recovery Time: Comparable to a discrete fast recovery diode, making it suitable for bridge circuits.
- High-Speed Switching: Ideal for high-speed switching applications in power supplies, converters, and PWM motor controls.
- Pb-Free Device: Compliant with lead-free requirements.
- Fast Recovery Time: The source-to-drain diode has a fast recovery time, enhancing overall efficiency.
Applications
The MTP2P50EG is particularly well-suited for various high-voltage, high-speed switching applications, including:
- Power Supplies: High-voltage power supply systems.
- Converters: DC-DC converters and other power conversion circuits.
- PWM Motor Controls: Pulse Width Modulation motor control systems.
- Bridge Circuits: Bridge configurations where diode speed and commutating safe operating areas are critical.
Q & A
- Q: What is the maximum drain-source voltage for the MTP2P50EG?
A: The MTP2P50EG has a maximum VDS of 500V. - Q: What is the continuous drain current rating of the MTP2P50EG?
A: The continuous drain current rating is 2A. - Q: Does the MTP2P50EG require a heat sink for thermal management?
A: Depending on the application and power dissipation, a heat sink may be recommended to ensure optimal thermal performance. - Q: What is the operating temperature range for the MTP2P50EG?
A: The operating and storage temperature range is -55 to 150°C. - Q: What is the thermal resistance - junction-to-case for the MTP2P50EG?
A: The thermal resistance - junction-to-case is 1.67°C/W. - Q: Is the MTP2P50EG a Pb-Free device?
A: Yes, the MTP2P50EG is a Pb-Free device. - Q: What is the typical static drain-source on-resistance of the MTP2P50EG?
A: The typical static drain-source on-resistance is 4.5 - 6.0 Ω. - Q: What are the key applications of the MTP2P50EG?
A: Key applications include power supplies, converters, PWM motor controls, and bridge circuits. - Q: What is the maximum lead temperature for soldering the MTP2P50EG?
A: The maximum lead temperature for soldering is 260°C. - Q: Does the MTP2P50EG have a fast recovery diode?
A: Yes, the source-to-drain diode has a fast recovery time comparable to a discrete fast recovery diode.
