Overview
The MTP2P50E is a high-voltage P-channel Power MOSFET produced by onsemi. This device is designed to offer enhanced voltage-blocking capability without degrading performance over time, thanks to its advanced termination scheme. It is particularly suited for high-voltage, high-speed switching applications, including power supplies, converters, and PWM motor controls. The MTP2P50E features a robust design that can withstand high energy in avalanche and commutation modes, and it includes a fast-recovery drain-to-source diode, which enhances overall functionality and safety.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 500 | Vdc |
| Drain-Gate Voltage (VDGR) | 500 | Vdc |
| Gate-Source Voltage (VGS) - Continuous | ±20 | Vdc |
| Gate-Source Voltage (VGS) - Non-Repetitive (tp ≤ 10 ms) | ±40 | Vpk |
| Continuous Drain Current (ID) | 2.0 | A |
| Continuous Drain Current at 100°C (ID) | 1.6 | A |
| Single Pulse Drain Current (IDM) | 6.0 | A |
| Total Power Dissipation (PD) | 75 | W |
| Operating and Storage Temperature Range | -55 to 150 | °C |
| Drain-Source On-Resistance (RDS(on)) | 6.0 | Ω |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V |
| Forward Transconductance (gFS) | 0.5 | mhos |
| Turn-On Delay Time (td(on)) | 12 - 24 | ns |
| Turn-Off Delay Time (td(off)) | 21 - 42 | ns |
| Package | TO-220AB |
Key Features
- Robust High Voltage Termination: Enhanced voltage-blocking capability without performance degradation over time.
- Avalanche Energy Specified: Designed to withstand high energy in avalanche and commutation modes.
- Fast Recovery Drain-Source Diode: Comparable to a discrete fast recovery diode, enhancing overall functionality and safety.
- PWM Compatible: Suitable for Pulse Width Modulation applications.
- High Power Handling Capability: Specified for high power applications.
- Rapid Fall-Time of Output Voltage: Ensures efficient switching performance.
Applications
The MTP2P50E is specifically engineered for high-voltage and high-speed switching applications, including:
- Power Supplies
- Converters
- PWM Motor Controls
- Bridge Circuits:
- Where diode speed and safe operating areas are critical.
- Provides an added safety margin against unexpected voltage transients.
Q & A
- What is the maximum drain-source voltage of the MTP2P50E?
The maximum drain-source voltage (VDSS) is 500 Vdc.
- What is the continuous drain current rating of the MTP2P50E?
The continuous drain current (ID) is 2.0 A.
- What is the gate-source voltage range for the MTP2P50E?
The gate-source voltage (VGS) range is ±20 Vdc for continuous operation and ±40 Vpk for non-repetitive pulses (tp ≤ 10 ms).
- What is the typical turn-on and turn-off delay time for the MTP2P50E?
The typical turn-on delay time (td(on)) is 12 - 24 ns, and the typical turn-off delay time (td(off)) is 21 - 42 ns.
- What is the package type of the MTP2P50E?
The package type is TO-220AB.
- What are the operating and storage temperature ranges for the MTP2P50E?
The operating and storage temperature range is -55 to 150°C.
- Is the MTP2P50E Pb-free?
Yes, the MTP2P50E is a Pb-free device.
- What is the total power dissipation rating of the MTP2P50E?
The total power dissipation (PD) is 75 W.
- What are some typical applications for the MTP2P50E?
Typical applications include power supplies, converters, PWM motor controls, and bridge circuits.
- Does the MTP2P50E have a fast-recovery drain-source diode?
Yes, the MTP2P50E includes a fast-recovery drain-source diode comparable to a discrete fast recovery diode.
- How does the MTP2P50E handle avalanche energy?
The device is designed to withstand high energy in avalanche and commutation modes, with specified avalanche energy ratings.
