Overview
The MTB50P03HDLT4G is a P-Channel Power MOSFET produced by onsemi, designed for high-performance applications requiring low voltage and high-speed switching. This device is housed in a D2PAK package and is optimized for use in power supplies, converters, and PWM motor controls. It is particularly suited for bridge circuits where diode speed and commutating safe operating areas are critical. The MTB50P03HDLT4G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | Vdc |
| Drain Current - Continuous | ID | 50 | A |
| Drain Current - Continuous @ 100°C | ID | 31 | A |
| Drain Current - Single Pulse (tp ≤ 10 μs) | IDM | 150 | A |
| Gate-Source Voltage - Continuous | VGS | ±15 | Vdc |
| Gate-Source Voltage - Non-Repetitive (tp ≤ 10 ms) | VGSM | ±20 | Vdc |
| Static Drain-Source On-Resistance | RDS(on) | 25 | mΩ |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 150 | °C |
| Thermal Resistance - Junction-to-Case | RθJC | 1.0 | °C/W |
| Thermal Resistance - Junction-to-Ambient | RθJA | 62.5 | °C/W |
Key Features
- Avalanche Energy Specified: The device is designed to withstand high energy in avalanche and commutation modes.
- Source-to-Drain Diode Recovery Time: Comparable to a discrete fast recovery diode, making it suitable for bridge circuits.
- Low Voltage, High Speed Switching: Optimized for applications requiring fast switching times.
- IDSS and VDS(on) Specified at Elevated Temperature: Ensures reliable performance across a wide temperature range.
- Short Heatsink Tab Manufactured: Not sheared, enhancing thermal performance.
- Specially Designed Leadframe: For maximum power dissipation.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other demanding applications.
- Pb-Free and RoHS Compliant: Environmentally friendly packaging.
Applications
- Power Supplies: Ideal for high-efficiency power supply designs.
- Converters: Suitable for DC-DC converters and other power conversion applications.
- PWM Motor Controls: Optimized for pulse-width modulation motor control systems.
- Bridge Circuits: Particularly well-suited for bridge configurations where diode speed and safe operating areas are critical.
- Automotive Systems: AEC-Q101 qualified, making it suitable for automotive applications.
Q & A
- What is the maximum drain-source voltage of the MTB50P03HDLT4G?
The maximum drain-source voltage is 30 Vdc.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current rating is 50 A.
- What is the typical on-state resistance of the MTB50P03HDLT4G?
The typical on-state resistance is 25 mΩ.
- Is the MTB50P03HDLT4G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the operating temperature range of this MOSFET?
The operating and storage temperature range is -55 to 150 °C.
- What is the thermal resistance from junction to case for this device?
The thermal resistance from junction to case is 1.0 °C/W.
- Does the MTB50P03HDLT4G have a fast recovery diode?
Yes, it has a source-to-drain diode with a recovery time comparable to a discrete fast recovery diode.
- Is the MTB50P03HDLT4G Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant.
- What package type is the MTB50P03HDLT4G available in?
The device is housed in a D2PAK package.
- What are some typical applications for the MTB50P03HDLT4G?
Typical applications include power supplies, converters, PWM motor controls, and bridge circuits.
