Overview
The FQP33N10L is an N-Channel enhancement mode power MOSFET produced by onsemi, formerly Fairchild Semiconductor. Although this product is now obsolete and no longer in production, it was designed using advanced MOSFET technology to reduce on-state resistance and provide superior switching performance. This MOSFET was particularly suited for high-power applications due to its robust avalanche energy strength and high junction temperature rating.
Key Specifications
| Parameter | Min | |||
|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | 100 | V | ||
| Drain Current - Continuous (ID) at TC = 25°C | 18 | A | ||
| Drain Current - Continuous (ID) at TC = 100°C | 12.7 | A | ||
| Drain Current - Pulsed (IDM) | 72 | A | ||
| Gate-Source Voltage (VGSS) | ±20 | ±25 | V | |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 9 A | 0.040 | 0.052 | Ω | |
| Gate Threshold Voltage (VGS(th)) | 2.0 | 4.0 | V | |
| Maximum Junction Temperature (TJ) | 175 | °C | ||
| Power Dissipation (PD) at TC = 25°C | 41 | W | ||
| Thermal Resistance, Junction-to-Case (RθJC) | 3.70 | °C/W | ||
| Thermal Resistance, Junction-to-Ambient (RθJA) | 62.5 | °C/W |
Key Features
- High current capability: 18 A continuous drain current at 25°C and 12.7 A at 100°C.
- Low on-state resistance: RDS(on) = 52 mΩ (Max.) at VGS = 10 V, ID = 9 A.
- Low gate charge: Typical 38 nC.
- Low Crss (Typ. 62 pF): Reverse transfer capacitance.
- 100% Avalanche Tested: Ensures robustness against avalanche conditions.
- High junction temperature rating: Up to 175°C.
- Superior switching performance: Fast turn-on and turn-off times.
Applications
- Switched mode power supplies.
- Audio amplifiers.
- DC motor control.
- Variable switching power applications.
Q & A
- What is the maximum drain-source voltage of the FQP33N10L MOSFET?
The maximum drain-source voltage (VDSS) is 100 V.
- What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current (ID) is 18 A at 25°C and 12.7 A at 100°C.
- What is the typical on-state resistance of the FQP33N10L?
The typical on-state resistance (RDS(on)) is 40 mΩ at VGS = 10 V, ID = 9 A.
- What is the maximum junction temperature of the FQP33N10L?
The maximum junction temperature (TJ) is 175°C.
- Is the FQP33N10L still in production?
No, the FQP33N10L is obsolete and no longer in production.
- What are some typical applications for the FQP33N10L MOSFET?
Typical applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
- What is the thermal resistance from junction to case (RθJC)?
The thermal resistance from junction to case (RθJC) is 3.70 °C/W.
- What is the gate threshold voltage range of the FQP33N10L?
The gate threshold voltage (VGS(th)) range is from 2.0 V to 4.0 V.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation (PD) at 25°C is 41 W.
- Is the FQP33N10L suitable for high-temperature operations?
Yes, the FQP33N10L has a high junction temperature rating of up to 175°C, making it suitable for high-temperature operations.
