FQP33N10
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onsemi FQP33N10

Manufacturer No:
FQP33N10
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 100V 33A TO220-3
Delivery:
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Product Introduction

Overview

The FQP33N10 is an N-channel enhancement mode power MOSFET produced by onsemi, utilizing advanced QFET® planar stripe and DMOS technology. This device is designed to offer superior performance in a variety of high-power applications, including power supplies, power factor correction (PFC), DC-DC converters, and motor control. The FQP33N10 is known for its low on-state resistance, reduced switching losses, and high avalanche energy strength, making it a reliable choice for demanding power management tasks.

Key Specifications

ParameterValueUnit
Channel TypeN
Maximum Continuous Drain Current33 A
Maximum Drain Source Voltage100 V
Package TypeTO-220AB
Mounting TypeThrough Hole
Pin Count3
Maximum Drain Source Resistance52 mΩ
Channel ModeEnhancement
Minimum Gate Threshold Voltage2 V
Maximum Power Dissipation127 W
Maximum Gate Source Voltage±25 V
Typical Gate Charge @ Vgs38 nC @ 10 V
Maximum Operating Temperature+175 °C
Minimum Operating Temperature-55 °C

Key Features

  • Low on-state resistance (RDS(on)) of 52 mΩ @ 16.5 A, 10 V for improved efficiency.
  • Low gate charge (Qg) of 38 nC @ 10 V, reducing switching losses.
  • High current and voltage handling capabilities with a maximum continuous drain current of 33 A and a maximum drain-source voltage of 100 V.
  • Wide operating temperature range from -55°C to +175°C.
  • 100% avalanche tested for robust and reliable performance.
  • RoHS3 compliant, ensuring environmental sustainability.

Applications

  • Power supplies and power factor correction (PFC) circuits.
  • DC-DC converters and switching power supplies.
  • Motor drives and control systems.
  • Lighting ballasts and plasma display panels (PDP).
  • Industrial and consumer electronics requiring high-power switching and amplification.

Q & A

  1. What is the maximum continuous drain current of the FQP33N10? The maximum continuous drain current is 33 A at 25°C and 23 A at 100°C.
  2. What is the maximum drain-source voltage of the FQP33N10? The maximum drain-source voltage is 100 V.
  3. What is the typical gate charge of the FQP33N10? The typical gate charge is 38 nC @ 10 V.
  4. What is the operating temperature range of the FQP33N10? The operating temperature range is from -55°C to +175°C.
  5. Is the FQP33N10 RoHS compliant? Yes, the FQP33N10 is RoHS3 compliant.
  6. What are the common applications of the FQP33N10? Common applications include power supplies, PFC, DC-DC converters, motor drives, and lighting ballasts.
  7. What is the package type of the FQP33N10? The package type is TO-220AB.
  8. What is the maximum power dissipation of the FQP33N10? The maximum power dissipation is 127 W.
  9. What is the minimum gate threshold voltage of the FQP33N10? The minimum gate threshold voltage is 2 V.
  10. Is the FQP33N10 suitable for high-power switching applications? Yes, it is designed for high-power switching and amplification applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:52mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):127W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FQP33N10 FQP33N10L FQP13N10
Manufacturer onsemi onsemi onsemi
Product Status Last Time Buy Obsolete Last Time Buy
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 33A (Tc) 12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 16.5A, 10V 52mOhm @ 16.5A, 10V 180mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 40 nC @ 5 V 16 nC @ 10 V
Vgs (Max) ±25V ±20V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V 1630 pF @ 25 V 450 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 127W (Tc) 127W (Tc) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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