Overview
The FQP33N10 is an N-channel enhancement mode power MOSFET produced by onsemi, utilizing advanced QFET® planar stripe and DMOS technology. This device is designed to offer superior performance in a variety of high-power applications, including power supplies, power factor correction (PFC), DC-DC converters, and motor control. The FQP33N10 is known for its low on-state resistance, reduced switching losses, and high avalanche energy strength, making it a reliable choice for demanding power management tasks.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Channel Type | N | |
Maximum Continuous Drain Current | 33 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 52 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2 V | |
Maximum Power Dissipation | 127 W | |
Maximum Gate Source Voltage | ±25 V | |
Typical Gate Charge @ Vgs | 38 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C |
Key Features
- Low on-state resistance (RDS(on)) of 52 mΩ @ 16.5 A, 10 V for improved efficiency.
- Low gate charge (Qg) of 38 nC @ 10 V, reducing switching losses.
- High current and voltage handling capabilities with a maximum continuous drain current of 33 A and a maximum drain-source voltage of 100 V.
- Wide operating temperature range from -55°C to +175°C.
- 100% avalanche tested for robust and reliable performance.
- RoHS3 compliant, ensuring environmental sustainability.
Applications
- Power supplies and power factor correction (PFC) circuits.
- DC-DC converters and switching power supplies.
- Motor drives and control systems.
- Lighting ballasts and plasma display panels (PDP).
- Industrial and consumer electronics requiring high-power switching and amplification.
Q & A
- What is the maximum continuous drain current of the FQP33N10? The maximum continuous drain current is 33 A at 25°C and 23 A at 100°C.
- What is the maximum drain-source voltage of the FQP33N10? The maximum drain-source voltage is 100 V.
- What is the typical gate charge of the FQP33N10? The typical gate charge is 38 nC @ 10 V.
- What is the operating temperature range of the FQP33N10? The operating temperature range is from -55°C to +175°C.
- Is the FQP33N10 RoHS compliant? Yes, the FQP33N10 is RoHS3 compliant.
- What are the common applications of the FQP33N10? Common applications include power supplies, PFC, DC-DC converters, motor drives, and lighting ballasts.
- What is the package type of the FQP33N10? The package type is TO-220AB.
- What is the maximum power dissipation of the FQP33N10? The maximum power dissipation is 127 W.
- What is the minimum gate threshold voltage of the FQP33N10? The minimum gate threshold voltage is 2 V.
- Is the FQP33N10 suitable for high-power switching applications? Yes, it is designed for high-power switching and amplification applications.