Overview
The FQD7P20TM is a P-Channel enhancement mode power MOSFET produced by onsemi using their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance, provide superior switching performance, and offer high avalanche energy strength. The device is suitable for a variety of applications, including switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | -200 | V |
| ID (Drain Current) | -5.7 | A |
| RDS(on) (On-State Resistance) | 690 | mΩ |
| VGS (Gate-Source Voltage) | ±30 | V |
| Qg (Gate Charge) | 19 | nC |
| Crss (Reverse Transfer Capacitance) | 25 | pF |
| RθJC (Thermal Resistance Junction to Case) | 2.27 | °C/W |
| RθJA (Thermal Resistance Junction to Ambient) | 110 | °C/W (Minimum Pad of 2-oz Copper) |
Key Features
- Low on-state resistance (RDS(on) = 690 mΩ @ VGS = -10 V, ID = -2.85 A)
- Low gate charge (Typ. 19 nC)
- Low Crss (Typ. 25 pF)
- 100% avalanche tested
- Superior switching performance and high avalanche energy strength
Applications
- Switched mode power supplies
- Audio amplifiers
- DC motor control
- Variable switching power applications
- Lighting applications
Q & A
- What is the maximum drain-source voltage of the FQD7P20TM MOSFET?
The maximum drain-source voltage (VDS) is -200 V.
- What is the maximum continuous drain current of the FQD7P20TM MOSFET?
The maximum continuous drain current (ID) is -5.7 A.
- What is the on-state resistance of the FQD7P20TM MOSFET?
The on-state resistance (RDS(on)) is 690 mΩ at VGS = -10 V and ID = -2.85 A.
- What is the typical gate charge of the FQD7P20TM MOSFET?
The typical gate charge (Qg) is 19 nC.
- What is the thermal resistance junction to case of the FQD7P20TM MOSFET?
The thermal resistance junction to case (RθJC) is 2.27 °C/W.
- What is the thermal resistance junction to ambient of the FQD7P20TM MOSFET?
The thermal resistance junction to ambient (RθJA) is 110 °C/W with a minimum pad of 2-oz copper.
- What are the typical applications of the FQD7P20TM MOSFET?
The FQD7P20TM is suitable for switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
- Is the FQD7P20TM MOSFET 100% avalanche tested?
- What technology is used to produce the FQD7P20TM MOSFET?
The FQD7P20TM MOSFET is produced using onsemi's proprietary planar stripe and DMOS technology.
- What package type is the FQD7P20TM MOSFET available in?
The FQD7P20TM MOSFET is available in the DPAK-3 / TO-252-3 package.
