Overview
The FQD5P20TM is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The device is suitable for various applications including switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
Key Specifications
| Parameter | Unit | Min | Typ | Max |
|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | V | -200 | -200 | -200 |
| Drain Current (ID) | A | -3.7 | -3.7 | -3.7 |
| On-State Resistance (RDS(on)) @ VGS = -10 V, ID = -1.85 A | Ω | - | 1.4 | 1.4 |
| Gate-Source Voltage (VGSS) | V | ±30 | ±30 | ±30 |
| Single Pulsed Avalanche Energy (EAS) | mJ | - | 330 | 330 |
| Power Dissipation (PD) @ TA = 25°C | W | - | 2.5 | 2.5 |
| Operating and Storage Temperature Range (TJ, TSTG) | °C | -55 to +150 | -55 to +150 | -55 to +150 |
| Thermal Resistance, Junction to Case (RθJC) | °C/W | - | 2.78 | 2.78 |
| Thermal Resistance, Junction to Ambient (RθJA) | °C/W | - | 110 | 110 |
| Low Gate Charge (Qg) @ VGS = -10 V | nC | - | 10 | 13 |
| Reverse Transfer Capacitance (Crss) | pF | - | 12 | 15 |
Key Features
- Low on-state resistance (RDS(on) = 1.4 Ω Max. @ VGS = -10 V, ID = -1.85 A)
- Low gate charge (Typ. 10 nC)
- Low reverse transfer capacitance (Crss) (Typ. 12 pF)
- 100% avalanche tested
- RoHS compliant
- High avalanche energy strength
- Superior switching performance
Applications
- Switched mode power supplies
- Audio amplifiers
- DC motor control
- Variable switching power applications
- Lighting applications
Q & A
- What is the drain-source voltage rating of the FQD5P20TM MOSFET?
The drain-source voltage (VDSS) rating is -200 V.
- What is the maximum continuous drain current for the FQD5P20TM?
The maximum continuous drain current (ID) is -3.7 A at TC = 25°C.
- What is the on-state resistance of the FQD5P20TM?
The on-state resistance (RDS(on)) is 1.4 Ω Max. at VGS = -10 V, ID = -1.85 A.
- Is the FQD5P20TM RoHS compliant?
- What are the typical applications for the FQD5P20TM MOSFET?
The FQD5P20TM is suitable for switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
- What is the thermal resistance from junction to case (RθJC) for the FQD5P20TM?
The thermal resistance from junction to case (RθJC) is 2.78 °C/W.
- What is the maximum gate-source voltage (VGSS) for the FQD5P20TM?
The maximum gate-source voltage (VGSS) is ±30 V.
- What is the single pulsed avalanche energy (EAS) rating for the FQD5P20TM?
The single pulsed avalanche energy (EAS) rating is 330 mJ.
- What is the power dissipation (PD) at TA = 25°C for the FQD5P20TM?
The power dissipation (PD) at TA = 25°C is 2.5 W.
- What is the operating and storage temperature range for the FQD5P20TM?
The operating and storage temperature range is -55 to +150 °C.
