FQD5P20TM
  • Share:

onsemi FQD5P20TM

Manufacturer No:
FQD5P20TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 200V 3.7A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD5P20TM is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The device is suitable for various applications including switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

Key Specifications

Parameter Unit Min Typ Max
Drain-Source Voltage (VDSS) V -200 -200 -200
Drain Current (ID) A -3.7 -3.7 -3.7
On-State Resistance (RDS(on)) @ VGS = -10 V, ID = -1.85 A Ω - 1.4 1.4
Gate-Source Voltage (VGSS) V ±30 ±30 ±30
Single Pulsed Avalanche Energy (EAS) mJ - 330 330
Power Dissipation (PD) @ TA = 25°C W - 2.5 2.5
Operating and Storage Temperature Range (TJ, TSTG) °C -55 to +150 -55 to +150 -55 to +150
Thermal Resistance, Junction to Case (RθJC) °C/W - 2.78 2.78
Thermal Resistance, Junction to Ambient (RθJA) °C/W - 110 110
Low Gate Charge (Qg) @ VGS = -10 V nC - 10 13
Reverse Transfer Capacitance (Crss) pF - 12 15

Key Features

  • Low on-state resistance (RDS(on) = 1.4 Ω Max. @ VGS = -10 V, ID = -1.85 A)
  • Low gate charge (Typ. 10 nC)
  • Low reverse transfer capacitance (Crss) (Typ. 12 pF)
  • 100% avalanche tested
  • RoHS compliant
  • High avalanche energy strength
  • Superior switching performance

Applications

  • Switched mode power supplies
  • Audio amplifiers
  • DC motor control
  • Variable switching power applications
  • Lighting applications

Q & A

  1. What is the drain-source voltage rating of the FQD5P20TM MOSFET?

    The drain-source voltage (VDSS) rating is -200 V.

  2. What is the maximum continuous drain current for the FQD5P20TM?

    The maximum continuous drain current (ID) is -3.7 A at TC = 25°C.

  3. What is the on-state resistance of the FQD5P20TM?

    The on-state resistance (RDS(on)) is 1.4 Ω Max. at VGS = -10 V, ID = -1.85 A.

  4. Is the FQD5P20TM RoHS compliant?
  5. What are the typical applications for the FQD5P20TM MOSFET?

    The FQD5P20TM is suitable for switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

  6. What is the thermal resistance from junction to case (RθJC) for the FQD5P20TM?

    The thermal resistance from junction to case (RθJC) is 2.78 °C/W.

  7. What is the maximum gate-source voltage (VGSS) for the FQD5P20TM?

    The maximum gate-source voltage (VGSS) is ±30 V.

  8. What is the single pulsed avalanche energy (EAS) rating for the FQD5P20TM?

    The single pulsed avalanche energy (EAS) rating is 330 mJ.

  9. What is the power dissipation (PD) at TA = 25°C for the FQD5P20TM?

    The power dissipation (PD) at TA = 25°C is 2.5 W.

  10. What is the operating and storage temperature range for the FQD5P20TM?

    The operating and storage temperature range is -55 to +150 °C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1.85A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.99
808

Please send RFQ , we will respond immediately.

Same Series
FQU5P20TU
FQU5P20TU
MOSFET P-CH 200V 3.7A IPAK
FQD5P20TF
FQD5P20TF
MOSFET P-CH 200V 3.7A DPAK
FQD5P20TM_F080
FQD5P20TM_F080
MOSFET P-CH 200V 3.7A DPAK

Similar Products

Part Number FQD5P20TM FQD7P20TM FQD3P20TM FQD5P10TM FQD5P20TF
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Last Time Buy Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 100 V 200 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Tc) 5.7A (Tc) 2.4A (Tc) 3.6A (Tc) 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.85A, 10V 690mOhm @ 2.85A, 10V 2.7Ohm @ 1.2A, 10V 1.05Ohm @ 1.8A, 10V 1.4Ohm @ 1.85A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 25 nC @ 10 V 8 nC @ 10 V 8.2 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V 770 pF @ 25 V 250 pF @ 25 V 250 pF @ 25 V 430 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 55W (Tc) 2.5W (Ta), 37W (Tc) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB