FQD7P20TM_F080
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onsemi FQD7P20TM_F080

Manufacturer No:
FQD7P20TM_F080
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 200V 5.7A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD7P20TM_F080 is a P-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using onsemi's proprietary planar stripe and DMOS technology, which offers advanced performance characteristics. It is packaged in a DPAK (TO-252) package, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current5.7 A
Rds On - Drain-Source Resistance690 mΩ
Vgs - Gate-Source Voltage-20 to 10 V

Key Features

  • Enhancement mode P-Channel MOSFET
  • High drain-source breakdown voltage of 200 V
  • Continuous drain current of 5.7 A
  • Low drain-source on-resistance of 690 mΩ
  • DPAK (TO-252) package for efficient heat dissipation and compact design
  • Advanced planar stripe and DMOS technology for improved performance

Applications

The FQD7P20TM_F080 is suitable for various power management applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Audio amplifiers and other high-power audio equipment
  • Industrial control systems and automation
  • Automotive electronics and systems

Q & A

  1. What is the drain-source breakdown voltage of the FQD7P20TM_F080?
    The drain-source breakdown voltage is 200 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current is 5.7 A.
  3. What is the typical drain-source on-resistance of the FQD7P20TM_F080?
    The typical drain-source on-resistance is 690 mΩ.
  4. In what package is the FQD7P20TM_F080 available?
    The FQD7P20TM_F080 is available in a DPAK (TO-252) package.
  5. What technology is used to fabricate this MOSFET?
    This MOSFET is fabricated using onsemi's proprietary planar stripe and DMOS technology.
  6. What are some common applications for the FQD7P20TM_F080?
    Common applications include power supplies, motor control systems, audio amplifiers, industrial control systems, and automotive electronics.
  7. What is the gate-source voltage range for the FQD7P20TM_F080?
    The gate-source voltage range is -20 to 10 V.
  8. Is the FQD7P20TM_F080 still in production?
    No, the FQD7P20TM_F080 is listed as obsolete.
  9. Where can I find detailed specifications for the FQD7P20TM_F080?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Mouser and Digi-Key.
  10. What is the significance of the 'TM' in the part number FQD7P20TM_F080?
    The 'TM' typically indicates a specific package or configuration, in this case, the DPAK package.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:690mOhm @ 2.85A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:770 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
FQD7P20TF
FQD7P20TF
MOSFET P-CH 200V 5.7A DPAK
FQD7P20TM_F080
FQD7P20TM_F080
MOSFET P-CH 200V 5.7A DPAK

Similar Products

Part Number FQD7P20TM_F080 FQD5P20TM_F080 FQD7N20TM_F080
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc) 3.7A (Tc) 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 690mOhm @ 2.85A, 10V 1.4Ohm @ 1.85A, 10V 690mOhm @ 2.65A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 13 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 25 V 430 pF @ 25 V 400 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta), 55W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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