Overview
The FQD20N06TM is a 60V N-Channel MOSFET produced by onsemi (formerly Fairchild Semiconductor). This enhancement mode power field effect transistor is designed using Fairchild’s proprietary planar stripe, DMOS technology. The device is optimized for low voltage applications, offering superior switching performance, low on-state resistance, and the ability to withstand high energy pulses in avalanche and commutation modes.
Key Specifications
| Parameter | Typical | Maximum | Units |
|---|---|---|---|
| Drain-Source Voltage (VDSS) | - | 60 | V |
| Continuous Drain Current (ID) at TC = 25°C | - | 16.8 | A |
| Pulsed Drain Current (IDM) | - | 67.2 | A |
| Gate-Source Voltage (VGSS) | - | ±25 | V |
| Power Dissipation (PD) at TA = 25°C | - | 2.5 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 | -55 to +150 | °C |
| Maximum Junction Temperature (TJ) | - | 150 | °C |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10V, ID = 8.4A | 0.063 | 0.063 | Ω |
| Thermal Resistance, Junction-to-Case (RθJC) | - | 3.28 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | - | 110 | °C/W |
Key Features
- Low on-state resistance (RDS(on) = 0.063Ω at VGS = 10V, ID = 8.4A)
- Low gate charge (typical 11.5 nC)
- Low Crss (typical 25 pF)
- Fast switching capabilities
- 100% avalanche tested
- Improved dv/dt capability
- Maximum junction temperature rating of 150°C
- RoHS compliant
Applications
The FQD20N06TM is well-suited for various low voltage applications, including:
- Automotive systems
- DC/DC converters
- High efficiency switching for power management in portable and battery-operated products
Q & A
- What is the maximum drain-source voltage (VDSS) of the FQD20N06TM?
The maximum drain-source voltage (VDSS) is 60V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 16.8A.
- What is the typical on-state resistance (RDS(on)) at VGS = 10V, ID = 8.4A?
The typical on-state resistance (RDS(on)) at VGS = 10V, ID = 8.4A is 0.063Ω.
- What is the maximum junction temperature (TJ) rating?
The maximum junction temperature (TJ) rating is 150°C.
- Is the FQD20N06TM RoHS compliant?
- What are the typical applications of the FQD20N06TM?
The FQD20N06TM is typically used in automotive systems, DC/DC converters, and high efficiency switching for power management in portable and battery-operated products.
- What is the thermal resistance, junction-to-case (RθJC) of the FQD20N06TM?
The thermal resistance, junction-to-case (RθJC) is 3.28°C/W.
- What is the thermal resistance, junction-to-ambient (RθJA) of the FQD20N06TM?
The thermal resistance, junction-to-ambient (RθJA) is 110°C/W.
- What is the gate charge (Qg) at VDS = 48V, ID = 20A, VGS = 10V?
The gate charge (Qg) at VDS = 48V, ID = 20A, VGS = 10V is typically 11.5 nC.
- What is the peak diode recovery dv/dt of the FQD20N06TM?
The peak diode recovery dv/dt is 7.0 V/ns.
