FQD30N06TM
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onsemi FQD30N06TM

Manufacturer No:
FQD30N06TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 22.7A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD30N06TM is an N-Channel Enhancement Mode Power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The device is suitable for a variety of applications, including switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 60 V
Continuous Drain Current (ID) at TC = 25°C 22.7 A
Continuous Drain Current (ID) at TC = 100°C 14.3 A
Pulsed Drain Current (IDM) 90.8 A
Gate-Source Voltage (VGSS) ±25 V
Single Pulse Avalanche Energy (EAS) 280 mJ
Power Dissipation (PD) at TA = 25°C 2.5 W
Thermal Resistance, Junction to Case (RθJC) 2.85 °C/W
Gate Threshold Voltage (VGS(th)) 2.0 - 4.0 V
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 11.4 A 0.036 - 0.045 Ω
Total Gate Charge (Qg) 19 - 25 nC

Key Features

  • Low on-state resistance (RDS(on) = 0.036 - 0.045 Ω at VGS = 10 V, ID = 11.4 A)
  • Low gate charge (Typ. 19 nC)
  • Low Crss (Typ. 40 pF)
  • 100% Avalanche tested
  • Pb-Free, Halide-Free, and RoHS compliant
  • High avalanche energy strength
  • Superior switching performance

Applications

  • Switched mode power supplies
  • Audio amplifiers
  • DC motor control
  • Variable switching power applications

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FQD30N06TM?

    The maximum drain to source voltage (VDSS) is 60 V.

  2. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 22.7 A.

  3. What is the gate-source voltage (VGSS) range?

    The gate-source voltage (VGSS) range is ±25 V.

  4. What is the single pulse avalanche energy (EAS) of the FQD30N06TM?

    The single pulse avalanche energy (EAS) is 280 mJ.

  5. Is the FQD30N06TM Pb-Free, Halide-Free, and RoHS compliant?
  6. What are the typical applications of the FQD30N06TM?

    The typical applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

  7. What is the thermal resistance, junction to case (RθJC), of the FQD30N06TM?

    The thermal resistance, junction to case (RθJC), is 2.85 °C/W.

  8. What is the gate threshold voltage (VGS(th)) range of the FQD30N06TM?

    The gate threshold voltage (VGS(th)) range is 2.0 - 4.0 V.

  9. What is the static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 11.4 A?

    The static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 11.4 A is 0.036 - 0.045 Ω.

  10. What is the total gate charge (Qg) of the FQD30N06TM?

    The total gate charge (Qg) is 19 - 25 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:22.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:45mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:945 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 44W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FQD30N06TM FQD20N06TM FQD30N06LTM FQD30N06TF
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor
Product Status Active Last Time Buy Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 22.7A (Tc) 16.8A (Tc) 24A (Tc) 22.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V, 10V 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 11.4A, 10V 63mOhm @ 8.4A, 10V 39mOhm @ 12A, 10V 45mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 2.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 15 nC @ 10 V 20 nC @ 5 V 25 nC @ 10 V
Vgs (Max) ±25V ±25V ±20V ±25V
Input Capacitance (Ciss) (Max) @ Vds 945 pF @ 25 V 590 pF @ 25 V 1040 pF @ 25 V 945 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2.5W (Ta), 44W (Tc) 2.5W (Ta), 38W (Tc) 2.5W (Ta), 44W (Tc) 2.5W (Ta), 44W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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