Overview
The FQD30N06TM is an N-Channel Enhancement Mode Power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The device is suitable for a variety of applications, including switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain to Source Voltage (VDSS) | 60 | V |
Continuous Drain Current (ID) at TC = 25°C | 22.7 | A |
Continuous Drain Current (ID) at TC = 100°C | 14.3 | A |
Pulsed Drain Current (IDM) | 90.8 | A |
Gate-Source Voltage (VGSS) | ±25 | V |
Single Pulse Avalanche Energy (EAS) | 280 | mJ |
Power Dissipation (PD) at TA = 25°C | 2.5 | W |
Thermal Resistance, Junction to Case (RθJC) | 2.85 | °C/W |
Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V |
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 11.4 A | 0.036 - 0.045 | Ω |
Total Gate Charge (Qg) | 19 - 25 | nC |
Key Features
- Low on-state resistance (RDS(on) = 0.036 - 0.045 Ω at VGS = 10 V, ID = 11.4 A)
- Low gate charge (Typ. 19 nC)
- Low Crss (Typ. 40 pF)
- 100% Avalanche tested
- Pb-Free, Halide-Free, and RoHS compliant
- High avalanche energy strength
- Superior switching performance
Applications
- Switched mode power supplies
- Audio amplifiers
- DC motor control
- Variable switching power applications
Q & A
- What is the maximum drain to source voltage (VDSS) of the FQD30N06TM?
The maximum drain to source voltage (VDSS) is 60 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 22.7 A.
- What is the gate-source voltage (VGSS) range?
The gate-source voltage (VGSS) range is ±25 V.
- What is the single pulse avalanche energy (EAS) of the FQD30N06TM?
The single pulse avalanche energy (EAS) is 280 mJ.
- Is the FQD30N06TM Pb-Free, Halide-Free, and RoHS compliant?
- What are the typical applications of the FQD30N06TM?
The typical applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
- What is the thermal resistance, junction to case (RθJC), of the FQD30N06TM?
The thermal resistance, junction to case (RθJC), is 2.85 °C/W.
- What is the gate threshold voltage (VGS(th)) range of the FQD30N06TM?
The gate threshold voltage (VGS(th)) range is 2.0 - 4.0 V.
- What is the static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 11.4 A?
The static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 11.4 A is 0.036 - 0.045 Ω.
- What is the total gate charge (Qg) of the FQD30N06TM?
The total gate charge (Qg) is 19 - 25 nC.