FDY302NZ
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onsemi FDY302NZ

Manufacturer No:
FDY302NZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 600MA SC89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FDY302NZ is a Single N-Channel MOSFET produced by onsemi, utilizing an advanced Power Trench process. This MOSFET is designed to optimize the on-resistance (RDS(ON)) at a gate-source voltage (VGS) of 2.5V, making it suitable for various low-voltage applications. However, it is important to note that the FDY302NZ is currently obsolete and no longer manufactured by onsemi.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
VGS (Gate-Source Voltage)±12 V
RDS(ON) @ VGS = 2.5V0.055 Ω (Typical)
ID (Continuous Drain Current)3.5 A
PD (Power Dissipation)1.25 W
Operating Temperature Range-55°C to 150°C

Key Features

  • Advanced Power Trench process for low on-resistance (RDS(ON)) at VGS = 2.5V
  • Single N-Channel configuration
  • Low threshold voltage for low-voltage applications
  • High current handling capability
  • Compact package for space-efficient designs

Applications

The FDY302NZ MOSFET is suitable for a variety of low-voltage applications, including but not limited to:

  • Portable electronics
  • Power management circuits
  • Switching regulators
  • Audio amplifiers
  • General-purpose switching applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDY302NZ MOSFET?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the typical on-resistance (RDS(ON)) at VGS = 2.5V?
    The typical on-resistance (RDS(ON)) at VGS = 2.5V is 0.055 Ω.
  3. What is the continuous drain current (ID) rating of the FDY302NZ?
    The continuous drain current (ID) rating is 3.5 A.
  4. Is the FDY302NZ still in production?
    No, the FDY302NZ is obsolete and no longer manufactured by onsemi.
  5. What is the operating temperature range of the FDY302NZ?
    The operating temperature range is -55°C to 150°C.
  6. What type of process is used in the FDY302NZ MOSFET?
    The FDY302NZ uses an advanced Power Trench process.
  7. What are some common applications for the FDY302NZ MOSFET?
    Common applications include portable electronics, power management circuits, switching regulators, audio amplifiers, and general-purpose switching applications.
  8. What is the maximum power dissipation (PD) of the FDY302NZ?
    The maximum power dissipation (PD) is 1.25 W.
  9. What is the gate-source voltage (VGS) range for the FDY302NZ?
    The gate-source voltage (VGS) range is ±12 V.
  10. Where can I find detailed specifications for the FDY302NZ?
    Detailed specifications can be found in the datasheet available on onsemi's official website, Digi-Key, Mouser, and other electronic component distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:300mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.1 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
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Similar Products

Part Number FDY302NZ FDY300NZ FDY301NZ
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta) 600mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 300mOhm @ 600mA, 4.5V 700mOhm @ 600mA, 4.5V 5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.3V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.1 nC @ 4.5 V 1.1 nC @ 4.5 V 1.1 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 10 V 60 pF @ 10 V 60 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-89-3 SC-89-3 SC-89-3
Package / Case SC-89, SOT-490 SC-89, SOT-490 SC-89, SOT-490

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