FDY302NZ
  • Share:

onsemi FDY302NZ

Manufacturer No:
FDY302NZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 600MA SC89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDY302NZ is a Single N-Channel MOSFET produced by onsemi, utilizing an advanced Power Trench process. This MOSFET is designed to optimize the on-resistance (RDS(ON)) at a gate-source voltage (VGS) of 2.5V, making it suitable for various low-voltage applications. However, it is important to note that the FDY302NZ is currently obsolete and no longer manufactured by onsemi.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
VGS (Gate-Source Voltage)±12 V
RDS(ON) @ VGS = 2.5V0.055 Ω (Typical)
ID (Continuous Drain Current)3.5 A
PD (Power Dissipation)1.25 W
Operating Temperature Range-55°C to 150°C

Key Features

  • Advanced Power Trench process for low on-resistance (RDS(ON)) at VGS = 2.5V
  • Single N-Channel configuration
  • Low threshold voltage for low-voltage applications
  • High current handling capability
  • Compact package for space-efficient designs

Applications

The FDY302NZ MOSFET is suitable for a variety of low-voltage applications, including but not limited to:

  • Portable electronics
  • Power management circuits
  • Switching regulators
  • Audio amplifiers
  • General-purpose switching applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDY302NZ MOSFET?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the typical on-resistance (RDS(ON)) at VGS = 2.5V?
    The typical on-resistance (RDS(ON)) at VGS = 2.5V is 0.055 Ω.
  3. What is the continuous drain current (ID) rating of the FDY302NZ?
    The continuous drain current (ID) rating is 3.5 A.
  4. Is the FDY302NZ still in production?
    No, the FDY302NZ is obsolete and no longer manufactured by onsemi.
  5. What is the operating temperature range of the FDY302NZ?
    The operating temperature range is -55°C to 150°C.
  6. What type of process is used in the FDY302NZ MOSFET?
    The FDY302NZ uses an advanced Power Trench process.
  7. What are some common applications for the FDY302NZ MOSFET?
    Common applications include portable electronics, power management circuits, switching regulators, audio amplifiers, and general-purpose switching applications.
  8. What is the maximum power dissipation (PD) of the FDY302NZ?
    The maximum power dissipation (PD) is 1.25 W.
  9. What is the gate-source voltage (VGS) range for the FDY302NZ?
    The gate-source voltage (VGS) range is ±12 V.
  10. Where can I find detailed specifications for the FDY302NZ?
    Detailed specifications can be found in the datasheet available on onsemi's official website, Digi-Key, Mouser, and other electronic component distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:300mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.1 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
0 Remaining View Similar

In Stock

$0.42
1,192

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDY302NZ FDY300NZ FDY301NZ
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta) 600mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 300mOhm @ 600mA, 4.5V 700mOhm @ 600mA, 4.5V 5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.3V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.1 nC @ 4.5 V 1.1 nC @ 4.5 V 1.1 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 10 V 60 pF @ 10 V 60 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-89-3 SC-89-3 SC-89-3
Package / Case SC-89, SOT-490 SC-89, SOT-490 SC-89, SOT-490

Related Product By Categories

STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5