FDY300NZ
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onsemi FDY300NZ

Manufacturer No:
FDY300NZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 600MA SC89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDY300NZ is a Single N-Channel MOSFET designed by onsemi using their advanced Power Trench process. This MOSFET is optimized for low RDS(ON) at VGS = 2.5V, making it suitable for various general-purpose applications. It is particularly noted for its use in Li-Ion battery packs and other low-voltage, high-current applications. Although the device is discontinued and not recommended for new designs, it remains relevant for existing projects and legacy systems.

Key Specifications

Parameter Value Units
Drain-Source Voltage (VDS) 20 V
Gate-Source Voltage (VGS) −12 V
Continuous Drain Current (ID) 0.6 A
Pulsed Drain Current (ID) 1.0 A
Power Dissipation (PD) 625 mW
Static Drain-Source On-Resistance (RDS(ON)) @ VGS = 2.5V 850
Static Drain-Source On-Resistance (RDS(ON)) @ VGS = 4.5V 700
Gate Threshold Voltage (VGS(th)) 0.6 - 1.3 V
Operating and Storage Junction Temperature Range −55 to +150 °C
Thermal Resistance, Junction-to-Ambient (RJA) 200 - 280 °C/W

Key Features

  • Advanced Power Trench process for optimized RDS(ON) @ VGS = 2.5V
  • Low on-resistance: RDS(ON) = 850 mΩ @ VGS = 2.5V and RDS(ON) = 700 mΩ @ VGS = 4.5V
  • ESD protection diode for enhanced reliability
  • RoHS compliant, ensuring environmental sustainability
  • Small SOT-523FL package, suitable for compact designs

Applications

  • Li-Ion battery packs
  • Low-voltage, high-current applications
  • General-purpose switching and amplification
  • Portable electronics and consumer devices

Q & A

  1. What is the FDY300NZ MOSFET optimized for?

    The FDY300NZ is optimized for low RDS(ON) at VGS = 2.5V using onsemi's advanced Power Trench process.

  2. What are the maximum drain-source and gate-source voltages for the FDY300NZ?

    The maximum drain-source voltage (VDS) is 20V, and the maximum gate-source voltage (VGS) is ±12V.

  3. What is the continuous drain current rating of the FDY300NZ?

    The continuous drain current (ID) rating is 0.6A.

  4. Is the FDY300NZ RoHS compliant?
  5. What package type is the FDY300NZ available in?

    The FDY300NZ is available in the SOT-523FL package.

  6. What are the typical on-resistances at different gate-source voltages?

    The typical on-resistances are 850 mΩ @ VGS = 2.5V and 700 mΩ @ VGS = 4.5V.

  7. Does the FDY300NZ have ESD protection?
  8. What is the operating and storage junction temperature range for the FDY300NZ?

    The operating and storage junction temperature range is −55 to +150°C.

  9. Is the FDY300NZ recommended for new designs?

    No, the FDY300NZ is discontinued and not recommended for new designs.

  10. What should I do if I need a replacement for the FDY300NZ in a new design?

    You should contact an onsemi representative for information on suitable replacement parts.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.1 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
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Similar Products

Part Number FDY300NZ FDY302NZ FDY301NZ
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta) 600mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 700mOhm @ 600mA, 4.5V 300mOhm @ 600mA, 4.5V 5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.1 nC @ 4.5 V 1.1 nC @ 4.5 V 1.1 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 10 V 60 pF @ 10 V 60 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-89-3 SC-89-3 SC-89-3
Package / Case SC-89, SOT-490 SC-89, SOT-490 SC-89, SOT-490

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