Overview
The FDV304P_NB8U003 is a P-Channel enhancement mode field effect transistor (FET) produced by onsemi. This device is fabricated using onsemi's proprietary high cell density DMOS technology, which is designed to minimize on-state resistance at low gate drive conditions. It is particularly suited for battery power applications in devices such as notebook computers and cellular phones.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | -25 | V |
| Gate-Source Voltage (VGSS) | ±8 | V |
| Continuous Drain Current (ID) | -0.46 | A |
| Pulsed Drain Current (ID) | -1.5 | A |
| Maximum Power Dissipation (PD) | 0.35 | W |
| On-State Drain-Source Resistance (RDS(on)) at VGS = -4.5 V | 1.1 | Ω |
| On-State Drain-Source Resistance (RDS(on)) at VGS = -2.7 V | 1.5 | Ω |
| Gate Threshold Voltage (VGS(th)) | -0.65 to -1.5 | V |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | °C |
| Electrostatic Discharge Rating (ESD) | 6.0 kV (Human Body Model) |
Key Features
- Very low level gate drive requirements, allowing direct operation in 3 V circuits.
- Excellent on-state resistance even at gate drive voltages as low as 2.5 V.
- Compact industry standard SOT-23 surface mount package.
- Pb-Free and Halide-Free, RoHS compliant.
- Gate-Source Zener for ESD ruggedness.
- High cell density DMOS technology for minimized on-state resistance.
Applications
- Battery power management in devices such as notebook computers and cellular phones.
- Load switching and battery protection circuits.
Q & A
- What is the FDV304P_NB8U003?
The FDV304P_NB8U003 is a P-Channel enhancement mode field effect transistor produced by onsemi.
- What technology is used in the FDV304P_NB8U003?
It uses onsemi's proprietary high cell density DMOS technology.
- What is the maximum drain-source voltage (VDSS) of the FDV304P_NB8U003?
The maximum drain-source voltage (VDSS) is -25 V.
- What is the continuous drain current (ID) of the FDV304P_NB8U003?
The continuous drain current (ID) is -0.46 A.
- What is the maximum power dissipation (PD) of the FDV304P_NB8U003?
The maximum power dissipation (PD) is 0.35 W.
- What is the on-state drain-source resistance (RDS(on)) at VGS = -4.5 V?
The on-state drain-source resistance (RDS(on)) at VGS = -4.5 V is 1.1 Ω.
- Is the FDV304P_NB8U003 RoHS compliant?
Yes, the FDV304P_NB8U003 is Pb-Free, Halide-Free, and RoHS compliant.
- What is the operating and storage temperature range of the FDV304P_NB8U003?
The operating and storage temperature range is -55 to 150 °C.
- What is the electrostatic discharge (ESD) rating of the FDV304P_NB8U003?
The ESD rating is 6.0 kV (Human Body Model).
- In what package is the FDV304P_NB8U003 available?
The FDV304P_NB8U003 is available in a compact industry standard SOT-23 surface mount package.
