Overview
The FDV304P-D87Z is a P-Channel enhancement mode field effect transistor (MOSFET) produced by onsemi. This device is fabricated using onsemi's proprietary, high cell density, DMOS technology. It is designed to minimize on-state resistance, especially at low gate drive conditions, making it suitable for various battery-powered applications such as notebook computers and cellular phones.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Maximum Drain-Source Voltage | VDS | -25 | V |
| Maximum Gate-Source Voltage | VGS | -8 | V |
| Maximum Drain Current (Continuous) | ID | -0.46 | A |
| Maximum Drain Current (Pulsed) | ID | -1.5 | A |
| Maximum Power Dissipation | PD | 0.35 | W |
| Maximum Junction Temperature | TJ | 150 | °C |
| Gate-Threshold Voltage | VGS(th) | < 1.5 | V |
| On-State Resistance (at VGS = -4.5 V) | RDS(ON) | 1.1 | Ω |
| On-State Resistance (at VGS = -2.7 V) | RDS(ON) | 1.5 | Ω |
| Output Capacitance | Coss | 34 | pF |
| Package | SOT-23 |
Key Features
- Very low level gate drive requirements, allowing direct operation in 3V circuits with VGS(th) < 1.5 V.
- Gate-Source Zener for ESD ruggedness, with a Human Body Model ESD rating of 6 kV.
- Compact industry standard SOT-23 surface mount package.
- Low on-state resistance even at low gate drive voltages, such as 2.5 V.
- Halogen-free and compliant to RoHS Directive 2002/95/EC.
Applications
The FDV304P-D87Z is particularly suited for battery power applications, including:
- Notebook computers
- Cellular phones
- Other portable and battery-powered systems.
Q & A
- What is the maximum drain-source voltage of the FDV304P-D87Z?
The maximum drain-source voltage (VDS) is -25 V.
- What is the maximum gate-source voltage of the FDV304P-D87Z?
The maximum gate-source voltage (VGS) is -8 V.
- What is the maximum continuous drain current of the FDV304P-D87Z?
The maximum continuous drain current (ID) is -0.46 A.
- What is the maximum power dissipation of the FDV304P-D87Z?
The maximum power dissipation (PD) is 0.35 W.
- What is the maximum junction temperature of the FDV304P-D87Z?
The maximum junction temperature (TJ) is 150 °C.
- What is the typical on-state resistance of the FDV304P-D87Z at VGS = -4.5 V?
The typical on-state resistance (RDS(ON)) at VGS = -4.5 V is 1.1 Ω.
- Does the FDV304P-D87Z have ESD protection?
Yes, it has a Gate-Source Zener for ESD ruggedness with a Human Body Model ESD rating of 6 kV.
- What package type is the FDV304P-D87Z available in?
The FDV304P-D87Z is available in the SOT-23 surface mount package.
- Is the FDV304P-D87Z compliant with RoHS Directive?
Yes, it is halogen-free and compliant to RoHS Directive 2002/95/EC.
- What are some typical applications for the FDV304P-D87Z?
Typical applications include notebook computers, cellular phones, and other portable and battery-powered systems.
