FDS8449-F085P
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onsemi FDS8449-F085P

Manufacturer No:
FDS8449-F085P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 7.6A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS8449-F085P is a high-performance N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is designed to minimize on-state resistance, enhancing the overall efficiency and reliability of the device. The MOSFET is packaged in an 8-pin SOIC (Small Outline Integrated Circuit) package, making it suitable for a variety of applications where space is a concern.

Key Specifications

ParameterValue
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current7.6 A
Package Type8-SOIC

Key Features

  • Low on-state resistance due to onsemi's POWERTRENCH process, reducing power losses and improving efficiency.
  • High continuous drain current of 7.6 A, making it suitable for high-current applications.
  • Drain-source breakdown voltage of 40 V, providing robust protection against voltage spikes.
  • Compact 8-pin SOIC package, ideal for space-constrained designs.

Applications

The FDS8449-F085P MOSFET is versatile and can be used in a wide range of applications, including but not limited to:

  • Power management systems
  • DC-DC converters
  • Motor control circuits
  • Switching power supplies
  • Automotive and industrial control systems

Q & A

  1. What is the transistor polarity of the FDS8449-F085P? The transistor polarity is N-Channel.
  2. What is the continuous drain current of the FDS8449-F085P? The continuous drain current is 7.6 A.
  3. What is the drain-source breakdown voltage of the FDS8449-F085P? The drain-source breakdown voltage is 40 V.
  4. What package type is the FDS8449-F085P available in? The FDS8449-F085P is available in an 8-pin SOIC package.
  5. What technology is used in the FDS8449-F085P? The FDS8449-F085P uses onsemi's advanced POWERTRENCH process.
  6. What are some typical applications for the FDS8449-F085P? Typical applications include power management systems, DC-DC converters, motor control circuits, switching power supplies, and automotive and industrial control systems.
  7. Where can I find the datasheet for the FDS8449-F085P? The datasheet can be found on the official onsemi website or through distributors like Mouser and Ariat-Tech.
  8. What is the benefit of the POWERTRENCH process in the FDS8449-F085P? The POWERTRENCH process minimizes on-state resistance, reducing power losses and improving efficiency.
  9. Is the FDS8449-F085P suitable for high-current applications? Yes, the FDS8449-F085P is suitable for high-current applications due to its high continuous drain current.
  10. What is the significance of the 8-pin SOIC package? The 8-pin SOIC package is compact and ideal for space-constrained designs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:29mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number FDS8449-F085P FDS8449-F085
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Ta) 7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 7.6A, 10V 29mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 5 V 11 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 20 V 760 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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