Overview
The FDS8449-F085 is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed to offer high performance and low on-state resistance, making it suitable for a variety of power management applications. With a voltage rating of 40V and a continuous drain current of 7.6A, it is particularly well-suited for inverter and power supply applications. The MOSFET is also RoHS compliant and qualified to AEC Q101 standards, ensuring reliability and durability in automotive and industrial environments.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| VDSS (Drain to Source Voltage) | - | - | 40 | V | |
| VGS (Gate to Source Voltage) | - | - | ±20 | V | |
| ID (Drain Current Continuous) | VGS = 10V | - | 7.6 | A | |
| ID (Drain Current Pulsed) | - | - | 50 | A | |
| EAS (Single Pulse Avalanche Energy) | Note 1 | - | 27 | mJ | |
| PD (Power Dissipation) | - | - | 5 | W | |
| TJ, TSTG (Operating and Storage Temperature) | - | -55 to +150 | - | °C | |
| RθJC (Thermal Resistance Junction to Case) | - | - | 25 | °C/W | |
| RθJA (Thermal Resistance Junction to Ambient) | 1in2 copper pad area | - | 50 | °C/W | |
| rDS(on) (Drain to Source On Resistance) | ID = 7.6A, VGS = 10V | - | 21 | 29 | mΩ |
| rDS(on) (Drain to Source On Resistance) | ID = 6.8A, VGS = 4.5V | - | 26 | 36 | mΩ |
Key Features
- Typical RDS(on) = 21mΩ at VGS = 10V, ID = 7.6A and 26mΩ at VGS = 4.5V, ID = 6.8A
- Low gate charge (Typ Qg(5) = 7.7nC at VGS = 5V, ID = 7.6A)
- RoHS Compliant
- Qualified to AEC Q101 standards
- High performance trench technology for extremely low on-state resistance and superior switching performance
Applications
- Inverter applications
- Power Supplies
Q & A
- What is the maximum drain to source voltage (VDSS) of the FDS8449-F085 MOSFET?
The maximum drain to source voltage (VDSS) is 40V. - What is the continuous drain current (ID) rating of the FDS8449-F085?
The continuous drain current (ID) rating is 7.6A at VGS = 10V. - What is the typical on-state resistance (RDS(on)) of the FDS8449-F085?
The typical on-state resistance (RDS(on)) is 21mΩ at VGS = 10V and ID = 7.6A, and 26mΩ at VGS = 4.5V and ID = 6.8A. - Is the FDS8449-F085 RoHS compliant?
Yes, the FDS8449-F085 is RoHS compliant. - What are the typical applications of the FDS8449-F085 MOSFET?
The typical applications include inverter and power supply applications. - What is the thermal resistance junction to case (RθJC) of the FDS8449-F085?
The thermal resistance junction to case (RθJC) is 25°C/W. - What is the single pulse avalanche energy (EAS) rating of the FDS8449-F085?
The single pulse avalanche energy (EAS) rating is 27mJ. - What is the gate to source threshold voltage (VGS(th)) range of the FDS8449-F085?
The gate to source threshold voltage (VGS(th)) range is from 1V to 3V. - Is the FDS8449-F085 qualified to any automotive standards?
Yes, it is qualified to AEC Q101 standards. - What is the operating and storage temperature range for the FDS8449-F085?
The operating and storage temperature range is from -55°C to +150°C.
