FDS6675BZ
  • Share:

onsemi FDS6675BZ

Manufacturer No:
FDS6675BZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 11A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS6675BZ is a P-Channel PowerTrench® MOSFET produced by onsemi (formerly Fairchild Semiconductor). This device is fabricated using an advanced PowerTrench process, which is specifically designed to minimize on-state resistance. Although the product is currently obsolete and not in production, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

Parameter Value
Channel Type P-Channel
Maximum Drain Current 11 A
Maximum Drain-Source Voltage -30 V
On-State Resistance (Rds(on)) Typically 12 mΩ at Vgs = -10 V, Id = -11 A
Gate-Source Threshold Voltage (Vgs(th)) -2 to -4 V
Operating Temperature Range -55°C to 150°C

Key Features

  • Advanced PowerTrench process to minimize on-state resistance
  • Low on-state resistance (Rds(on)) for efficient power handling
  • High maximum drain current of 11 A
  • Maximum drain-source voltage of -30 V
  • Broad operating temperature range from -55°C to 150°C

Applications

The FDS6675BZ P-Channel MOSFET is suitable for various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Audio amplifiers and other high-power audio equipment
  • General-purpose switching and power management in industrial and consumer electronics

Q & A

  1. What is the channel type of the FDS6675BZ MOSFET?

    The FDS6675BZ is a P-Channel MOSFET.

  2. What is the maximum drain current of the FDS6675BZ?

    The maximum drain current is 11 A.

  3. What is the maximum drain-source voltage of the FDS6675BZ?

    The maximum drain-source voltage is -30 V.

  4. What is the typical on-state resistance (Rds(on)) of the FDS6675BZ?

    The typical on-state resistance is 12 mΩ at Vgs = -10 V, Id = -11 A.

  5. What is the operating temperature range of the FDS6675BZ?

    The operating temperature range is from -55°C to 150°C.

  6. Is the FDS6675BZ still in production?

    No, the FDS6675BZ is obsolete and not in production.

  7. What process is used to fabricate the FDS6675BZ?

    The FDS6675BZ is fabricated using the advanced PowerTrench process.

  8. What are some common applications for the FDS6675BZ?

    Common applications include power supplies, DC-DC converters, motor control, audio amplifiers, and general-purpose switching in industrial and consumer electronics.

  9. What is the gate-source threshold voltage (Vgs(th)) of the FDS6675BZ?

    The gate-source threshold voltage is between -2 to -4 V.

  10. Where can I find detailed specifications for the FDS6675BZ?

    Detailed specifications can be found in the datasheet available from sources like Mouser Electronics, Datasheet4U, and the onsemi website.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2470 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.81
498

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDS6675BZ FDS6673BZ
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 14.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 11A, 10V 7.8mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V 124 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2470 pF @ 15 V 4700 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK

Related Product By Brand

MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
LM317MDTG
LM317MDTG
onsemi
IC REG LINEAR POS ADJ 500MA DPAK