FDS6675BZ
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onsemi FDS6675BZ

Manufacturer No:
FDS6675BZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 11A 8SOIC
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The FDS6675BZ is a P-Channel PowerTrench® MOSFET produced by onsemi (formerly Fairchild Semiconductor). This device is fabricated using an advanced PowerTrench process, which is specifically designed to minimize on-state resistance. Although the product is currently obsolete and not in production, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

Parameter Value
Channel Type P-Channel
Maximum Drain Current 11 A
Maximum Drain-Source Voltage -30 V
On-State Resistance (Rds(on)) Typically 12 mΩ at Vgs = -10 V, Id = -11 A
Gate-Source Threshold Voltage (Vgs(th)) -2 to -4 V
Operating Temperature Range -55°C to 150°C

Key Features

  • Advanced PowerTrench process to minimize on-state resistance
  • Low on-state resistance (Rds(on)) for efficient power handling
  • High maximum drain current of 11 A
  • Maximum drain-source voltage of -30 V
  • Broad operating temperature range from -55°C to 150°C

Applications

The FDS6675BZ P-Channel MOSFET is suitable for various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Audio amplifiers and other high-power audio equipment
  • General-purpose switching and power management in industrial and consumer electronics

Q & A

  1. What is the channel type of the FDS6675BZ MOSFET?

    The FDS6675BZ is a P-Channel MOSFET.

  2. What is the maximum drain current of the FDS6675BZ?

    The maximum drain current is 11 A.

  3. What is the maximum drain-source voltage of the FDS6675BZ?

    The maximum drain-source voltage is -30 V.

  4. What is the typical on-state resistance (Rds(on)) of the FDS6675BZ?

    The typical on-state resistance is 12 mΩ at Vgs = -10 V, Id = -11 A.

  5. What is the operating temperature range of the FDS6675BZ?

    The operating temperature range is from -55°C to 150°C.

  6. Is the FDS6675BZ still in production?

    No, the FDS6675BZ is obsolete and not in production.

  7. What process is used to fabricate the FDS6675BZ?

    The FDS6675BZ is fabricated using the advanced PowerTrench process.

  8. What are some common applications for the FDS6675BZ?

    Common applications include power supplies, DC-DC converters, motor control, audio amplifiers, and general-purpose switching in industrial and consumer electronics.

  9. What is the gate-source threshold voltage (Vgs(th)) of the FDS6675BZ?

    The gate-source threshold voltage is between -2 to -4 V.

  10. Where can I find detailed specifications for the FDS6675BZ?

    Detailed specifications can be found in the datasheet available from sources like Mouser Electronics, Datasheet4U, and the onsemi website.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2470 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number FDS6675BZ FDS6673BZ
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 14.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 11A, 10V 7.8mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V 124 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2470 pF @ 15 V 4700 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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