Overview
The FDS6673BZ is a P-Channel MOSFET produced by onsemi, utilizing their advanced Power Trench technology. This device is designed to minimize on-state resistance, making it highly suitable for power management and load switching applications. It is particularly well-suited for use in notebook computers and portable battery packs due to its high performance and current handling capabilities.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | -30 | V | |
| VGS (Gate to Source Voltage) | - | - | ±25 | V | |
| ID (Drain Current) - Continuous | - | - | -14.5 | A | |
| ID (Drain Current) - Pulsed | - | - | -75 | A | |
| PD (Maximum Power Dissipation) | - | - | 2.5 | W | |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | -55 to +150 | - | °C | |
| RDS(on) (Drain to Source On-Resistance) @ VGS = -10 V, ID = -14.5 A | - | 6.5 | 7.8 | mΩ | |
| RDS(on) (Drain to Source On-Resistance) @ VGS = -4.5 V, ID = -12 A | - | 9.6 | 12 | mΩ | |
| VGS(th) (Gate to Source Threshold Voltage) | VDS = VGS, ID = -250 μA | -1 | -1.9 | -3 | V |
| RJA (Thermal Resistance, Junction to Ambient) | - | - | 50 | °C/W | |
| RJC (Thermal Resistance, Junction to Case) | - | - | 25 | °C/W |
Key Features
- High Performance Trench Technology for Extremely Low RDS(on)
- Extended VGS Range (±25 V) for Battery Applications
- HBM ESD Protection Level of 6.5 kV Typical
- High Power and Current Handling Capability
- Pb-Free, Halide Free and RoHS Compliant
Applications
The FDS6673BZ is well-suited for power management and load switching applications, particularly in:
- Notebook Computers
- Portable Battery Packs
Q & A
- What is the maximum drain to source voltage (VDS) for the FDS6673BZ?
The maximum drain to source voltage (VDS) is -30 V.
- What is the maximum continuous drain current (ID) for the FDS6673BZ?
The maximum continuous drain current (ID) is -14.5 A.
- What is the typical on-state resistance (RDS(on)) at VGS = -10 V and ID = -14.5 A?
The typical on-state resistance (RDS(on)) is 6.5 mΩ.
- Does the FDS6673BZ have ESD protection?
- Is the FDS6673BZ RoHS compliant?
- What is the operating and storage junction temperature range for the FDS6673BZ?
The operating and storage junction temperature range is -55°C to +150°C.
- What is the thermal resistance from junction to ambient (RJA) for the FDS6673BZ?
The thermal resistance from junction to ambient (RJA) is 50°C/W.
- What are some typical applications for the FDS6673BZ?
Typical applications include power management and load switching in notebook computers and portable battery packs.
- What is the gate to source threshold voltage (VGS(th)) for the FDS6673BZ?
The gate to source threshold voltage (VGS(th)) is between -1 V and -3 V.
- Does the FDS6673BZ have any special packaging options?
