FDN5630-B8
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onsemi FDN5630-B8

Manufacturer No:
FDN5630-B8
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
FET 60V 1.0 MOHM SSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN5630-B8 is an N-Channel MOSFET produced by onsemi, designed to enhance the efficiency of DC-DC converters. This device utilizes onsemi’s POWERTRENCH technology, which offers faster switching times compared to other MOSFETs with similar RDS(on) specifications. The FDN5630-B8 is packaged in a small SOT23 footprint, making it ideal for applications where board space is limited. It features very low RDS(on) values, optimized for high-frequency DC-DC converters, and is Pb-free and halogen-free, aligning with modern environmental standards.

Key Specifications

Parameter Unit Min Typ Max
Drain-Source Voltage (V_DSS) V - - 60
Gate-Source Voltage (V_GSS) V - - ±20
Continuous Drain Current (I_D) A - - 1.7
Pulsed Drain Current A - - 10
Power Dissipation (P_D) W - - 0.5
Operating and Storage Junction Temperature Range °C -55 - 150
Static Drain-Source On-Resistance (R_DS(on)) @ V_GS = 10 V, I_D = 1.7 A Ω 0.073 - 0.100
Static Drain-Source On-Resistance (R_DS(on)) @ V_GS = 6 V, I_D = 1.6 A Ω 0.083 - 0.120

Key Features

  • Very low RDS(on) in a small SOT23 footprint
  • Optimized for use in high-frequency DC-DC converters
  • Low gate charge and very fast switching times
  • Pb-free and halogen-free
  • High overall efficiency with less board space

Applications

  • DC-DC converters
  • Motor drives

Q & A

  1. What is the maximum drain-source voltage (V_DSS) of the FDN5630-B8?

    The maximum drain-source voltage (V_DSS) is 60 V.

  2. What is the continuous drain current (I_D) rating of the FDN5630-B8?

    The continuous drain current (I_D) rating is 1.7 A.

  3. What is the typical RDS(on) value at V_GS = 10 V and I_D = 1.7 A?

    The typical RDS(on) value is 0.100 Ω.

  4. What is the operating and storage junction temperature range for the FDN5630-B8?

    The operating and storage junction temperature range is -55°C to +150°C.

  5. Is the FDN5630-B8 Pb-free and halogen-free?
  6. What are the primary applications of the FDN5630-B8?

    The primary applications include DC-DC converters and motor drives.

  7. What technology does the FDN5630-B8 use to enhance its performance?

    The FDN5630-B8 uses onsemi’s POWERTRENCH technology.

  8. What is the package type of the FDN5630-B8?

    The package type is SOT23.

  9. What are the benefits of the low RDS(on) and fast switching times of the FDN5630-B8?

    The benefits include higher overall efficiency and reduced board space.

  10. What is the gate-source voltage (V_GS) range for the FDN5630-B8?

    The gate-source voltage (V_GS) range is ±20 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:560 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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