Overview
The FDMS86181E is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process with Shielded Gate technology. This device is designed to minimize on-state resistance while maintaining superior switching performance and a best-in-class soft body diode. It is packaged in a PQFN8 (Power 33) package, which is Pb-free, Halide-free, and RoHS compliant.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain to Source Voltage) | 100 | V |
| VGS (Gate to Source Voltage) | ±20 | V |
| ID (Drain Current: Continuous, TC = 25°C) | 47 | A |
| ID (Drain Current: Continuous, TC = 100°C) | 29 | A |
| RDS(on) (Static Drain to Source On Resistance at VGS = 10 V, ID = 16 A) | 12.8 | mΩ |
| RDS(on) (Static Drain to Source On Resistance at VGS = 6 V, ID = 8 A) | 34.6 | mΩ |
| EAS (Single Pulse Avalanche Energy) | 96 | mJ |
| TJ (Operating and Storage Junction Temperature Range) | −55 to +150 | °C |
| RJC (Thermal Resistance, Junction to Case) | 2.4 | °C/W |
| RJA (Thermal Resistance, Junction to Ambient) | 53 | °C/W |
Key Features
- Shielded Gate MOSFET Technology
- Low on-state resistance (RDS(on)) of 12.8 mΩ at VGS = 10 V, ID = 16 A and 34.6 mΩ at VGS = 6 V, ID = 8 A
- 50% lower Qrr (Reverse Recovery Charge) compared to other MOSFET suppliers, reducing switching noise/EMI
- MSL1 robust package design
- 100% UIL tested
- Pb-free, Halide-free, and RoHS compliant
Applications
- Primary DC-DC MOSFET
- Synchronous rectifier in DC-DC and AC-DC converters
- Motor drive applications
- Solar power systems
Q & A
- What is the maximum drain to source voltage (VDS) for the FDMS86181E?
The maximum drain to source voltage (VDS) is 100 V.
- What is the typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 16 A?
The typical on-state resistance (RDS(on)) is 12.8 mΩ.
- What is the thermal resistance from junction to case (RJC) for this MOSFET?
The thermal resistance from junction to case (RJC) is 2.4 °C/W.
- Is the FDMS86181E Pb-free and RoHS compliant?
- What are the typical applications for the FDMS86181E?
The FDMS86181E is typically used in primary DC-DC converters, synchronous rectifiers in DC-DC and AC-DC converters, motor drive applications, and solar power systems.
- What is the maximum continuous drain current at TC = 25°C?
The maximum continuous drain current at TC = 25°C is 47 A.
- What is the single pulse avalanche energy (EAS) for this MOSFET?
The single pulse avalanche energy (EAS) is 96 mJ.
- How does the Shielded Gate technology benefit the MOSFET?
The Shielded Gate technology minimizes on-state resistance and maintains superior switching performance with a best-in-class soft body diode.
- What is the operating and storage junction temperature range for the FDMS86181E?
The operating and storage junction temperature range is −55 to +150 °C.
- Is the FDMS86181E suitable for use in life support systems or FDA Class 3 medical devices?
No, the FDMS86181E is not designed or intended for use as a critical component in life support systems or FDA Class 3 medical devices.
