FDMC4435BZ
  • Share:

onsemi FDMC4435BZ

Manufacturer No:
FDMC4435BZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 8.5A/18A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC4435BZ is a P-Channel Power Trench® MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This device is designed to minimize on-state resistance, making it highly suitable for power management and load switching applications. It is particularly well-suited for use in notebook computers and portable battery packs due to its high performance and current handling capabilities.

Key Specifications

Parameter Rating Unit
VDS (Drain to Source Voltage) −30 V
VGS (Gate to Source Voltage) ±25 V
ID (Drain Current) - Continuous −18 A
ID (Drain Current) - Pulsed −50 A
rDS(on) at VGS = −10 V, ID = −8.5 A 20
rDS(on) at VGS = −4.5 V, ID = −6.3 A 37
EAS (Single Pulse Avalanche Energy) 32 mJ
PD (Power Dissipation) at TC = 25°C 31 W
TJ, TSTG (Operating and Storage Junction Temperature Range) −55 to +150 °C
RJC (Thermal Resistance, Junction to Case) 4 °C/W
RJA (Thermal Resistance, Junction to Ambient) 53 °C/W

Key Features

  • Max rDS(on) = 20 mΩ at VGS = −10 V, ID = −8.5 A and 37 mΩ at VGS = −4.5 V, ID = −6.3 A.
  • Extended VGSS range (−25 V) for battery applications.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability.
  • HBM ESD protection level > 7 kV typical.
  • 100% UIL tested.
  • Pb-free and RoHS compliant.

Applications

  • High side in DC-DC buck converters.
  • Notebook battery power management.
  • Load switch in notebook computers.

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC4435BZ MOSFET?

    The maximum drain to source voltage (VDS) is −30 V.

  2. What is the maximum continuous drain current (ID) of the FDMC4435BZ MOSFET?

    The maximum continuous drain current (ID) is −18 A at TC = 25°C.

  3. What is the typical on-state resistance (rDS(on)) of the FDMC4435BZ MOSFET at VGS = −10 V and ID = −8.5 A?

    The typical on-state resistance (rDS(on)) is 20 mΩ at VGS = −10 V and ID = −8.5 A.

  4. Does the FDMC4435BZ MOSFET have ESD protection? 7 kV typical.

  5. Is the FDMC4435BZ MOSFET RoHS compliant?
  6. What are the typical applications of the FDMC4435BZ MOSFET?
  7. What is the operating and storage junction temperature range of the FDMC4435BZ MOSFET?
  8. What is the thermal resistance, junction to case (RJC), of the FDMC4435BZ MOSFET?
  9. What is the thermal resistance, junction to ambient (RJA), of the FDMC4435BZ MOSFET?
  10. Does the FDMC4435BZ MOSFET have any special testing or certification?
  11. What package options are available for the FDMC4435BZ MOSFET?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2045 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 31W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$0.95
433

Please send RFQ , we will respond immediately.

Same Series
FDMC4435BZ-F126
FDMC4435BZ-F126
MOSFET P-CH 30V 8.5A/18A 8MLP

Similar Products

Part Number FDMC4435BZ FDMC4436BZ
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Obsolete
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 18A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 20mOhm @ 8.5A, 10V -
Vgs(th) (Max) @ Id 3V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V -
Vgs (Max) ±25V -
Input Capacitance (Ciss) (Max) @ Vds 2045 pF @ 15 V -
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 31W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package 8-MLP (3.3x3.3) -
Package / Case 8-PowerWDFN -

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT