Overview
The FCPF067N65S3 is a high-voltage N-Channel SuperFET III MOSFET produced by onsemi. This device is part of onsemi’s advanced super-junction (SJ) MOSFET family, utilizing charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates, making it highly suitable for various power systems requiring miniaturization and higher efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 650 | V |
| Gate to Source Voltage (VGSS) | ±30 | V (DC), ±30 V (AC, f > 1 Hz) |
| Continuous Drain Current (ID) | 44 A (TC = 25°C), 28 A (TC = 100°C) | A |
| Pulsed Drain Current (IDM) | 110 A | A |
| Single Pulsed Avalanche Energy (EAS) | 214 mJ | mJ |
| Avalanche Current (IAS) | 4.8 A | A |
| Repetitive Avalanche Energy (EAR) | 0.46 mJ | mJ |
| MOSFET dv/dt | 100 V/ns | V/ns |
| Peak Diode Recovery dv/dt | 20 V/ns | V/ns |
| Power Dissipation (PD) | 46 W (TC = 25°C), 0.37 W/°C derate above 25°C | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55°C to +150°C | °C |
| Maximum Lead Temperature for Soldering | 300°C (1/8” from case for 5 seconds) | °C |
| Thermal Resistance, Junction to Case (RθJC) | 2.7 °C/W | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 62.5 °C/W | °C/W |
| Typical On-Resistance (RDS(on)) | 59 mΩ @ 10 V, 22 A | mΩ |
| Typical Gate Charge (Qg) | 78 nC @ 10 V | nC |
| Effective Output Capacitance (Coss(eff.)) | 715 pF | pF |
Key Features
- High voltage rating of 650 V with a maximum breakdown voltage of 700 V at TJ = 150°C
- Typical on-resistance (RDS(on)) of 59 mΩ at 10 V and 22 A
- Ultra-low gate charge (Typ. Qg = 78 nC)
- Low effective output capacitance (Typ. Coss(eff.) = 715 pF)
- 100% avalanche tested
- Pb-free and RoHS compliant
- Designed to minimize conduction loss and provide superior switching performance
- Capable of withstanding extreme dv/dt rates
Applications
- Computing / Display Power Supplies
- Telecom / Server Power Supplies
- Industrial Power Supplies
- Lighting / Charger / Adapter
- UPS / Solar Power Systems
Q & A
- What is the maximum drain to source voltage (VDSS) of the FCPF067N65S3 MOSFET?
The maximum drain to source voltage (VDSS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the FCPF067N65S3 MOSFET?
The typical on-resistance (RDS(on)) is 59 mΩ at 10 V and 22 A.
- What is the maximum continuous drain current (ID) of the FCPF067N65S3 MOSFET at 25°C?
The maximum continuous drain current (ID) is 44 A at 25°C.
- What is the gate charge (Qg) of the FCPF067N65S3 MOSFET?
The typical gate charge (Qg) is 78 nC at 10 V.
- Is the FCPF067N65S3 MOSFET RoHS compliant?
- What are the operating and storage temperature ranges for the FCPF067N65S3 MOSFET?
The operating and storage temperature ranges are -55°C to +150°C.
- What is the thermal resistance, junction to case (RθJC), of the FCPF067N65S3 MOSFET?
The thermal resistance, junction to case (RθJC), is 2.7 °C/W.
- What are some typical applications of the FCPF067N65S3 MOSFET?
Typical applications include computing/display power supplies, telecom/server power supplies, industrial power supplies, lighting/charger/adapters, and UPS/solar power systems.
- What is the maximum power dissipation (PD) of the FCPF067N65S3 MOSFET at 25°C?
The maximum power dissipation (PD) is 46 W at 25°C, with a derate of 0.37 W/°C above 25°C.
- What is the peak diode recovery dv/dt of the FCPF067N65S3 MOSFET?
The peak diode recovery dv/dt is 20 V/ns.
