FCP067N65S3
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onsemi FCP067N65S3

Manufacturer No:
FCP067N65S3
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 650V 44A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCP067N65S3 is a high-voltage N-Channel MOSFET from ON Semiconductor, part of their SUPERFET III family. This MOSFET utilizes charge-balance technology and super-junction (SJ) architecture, offering outstanding performance in high-voltage applications. It is designed for easy drive and features a robust TO-220 package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Continuous Drain Current (Id)44 A
Maximum Drain Current (Idm)110 A
On-Resistance (Rds(on))67 mΩ
Power Dissipation (Pd)312 W
Package TypeTO-220AB

Key Features

  • High-voltage super-junction (SJ) technology for low on-resistance and high efficiency.
  • Charge-balance technology for improved performance.
  • Easy drive capability for simplified gate drive circuits.
  • Robust TO-220AB package for reliable operation in demanding environments.
  • High current handling capability with a maximum drain current of 110 A.

Applications

The FCP067N65S3 is suitable for various high-voltage applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power systems and automation.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-power switching and power management in consumer and industrial electronics.

Q & A

  1. What is the voltage rating of the FCP067N65S3 MOSFET?
    The voltage rating of the FCP067N65S3 MOSFET is 650 V.
  2. What is the continuous drain current of the FCP067N65S3?
    The continuous drain current of the FCP067N65S3 is 44 A.
  3. What is the maximum drain current of the FCP067N65S3?
    The maximum drain current of the FCP067N65S3 is 110 A.
  4. What is the on-resistance (Rds(on)) of the FCP067N65S3?
    The on-resistance (Rds(on)) of the FCP067N65S3 is 67 mΩ.
  5. In what package is the FCP067N65S3 available?
    The FCP067N65S3 is available in the TO-220AB package.
  6. What technology does the FCP067N65S3 use?
    The FCP067N65S3 uses high-voltage super-junction (SJ) technology and charge-balance technology.
  7. Is the FCP067N65S3 easy to drive?
    Yes, the FCP067N65S3 is designed for easy drive.
  8. What are some typical applications of the FCP067N65S3?
    The FCP067N65S3 is used in power supplies, motor control systems, industrial power systems, renewable energy systems, and high-power switching applications.
  9. What is the power dissipation capability of the FCP067N65S3?
    The power dissipation capability of the FCP067N65S3 is 312 W.
  10. Where can I find detailed specifications for the FCP067N65S3?
    Detailed specifications for the FCP067N65S3 can be found on the ON Semiconductor website, as well as on distributor websites such as Mouser and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:67mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:4.5V @ 4.4mA
Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3090 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):312W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number FCP067N65S3 FCPF067N65S3
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc) 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 67mOhm @ 22A, 10V 67mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4.4mA 4.5V @ 4.4mA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V 78 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3090 pF @ 400 V 3090 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 312W (Tc) 46W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220F-3
Package / Case TO-220-3 TO-220-3 Full Pack

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