CPH6444-TL-W
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onsemi CPH6444-TL-W

Manufacturer No:
CPH6444-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 4.5A 6CPH
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CPH6444-TL-W is an N-Channel Power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The CPH6444-TL-W features a drain-source voltage (VDSS) of 60V, a continuous drain current (ID) of 4.5A, and a typical on-resistance (RDS(on)) of 78mΩ. It is packaged in a SC-74, SOT-26, or SOT-457 package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterSymbolConditionsRatingsUnit
Drain to Source VoltageVDSS-60V
Gate to Source VoltageVGSS-±20V
Drain Current (DC)ID-4.5A
Drain Current (Pulse)IDPPW≤10μs, duty cycle≤1%18A
Allowable Power DissipationPDWhen mounted on ceramic substrate (900mm²×0.8mm)1.6W
Channel TemperatureTch-150°C
Storage TemperatureTstg--55 to +150°C
Static Drain to Source On-State ResistanceRDS(on)ID=2A, VGS=10V60-78
Input CapacitanceCissVDS=20V, f=1MHz505pF
Output CapacitanceCoss-57pF
Reverse Transfer CapacitanceCrss-37pF

Key Features

  • Low ON-resistance: Typical RDS(on) of 78mΩ at VGS=10V and ID=2A.
  • Protection Diode: Integrated protection diode for enhanced reliability.
  • 4V Drive Capability: Can be driven with a gate-source voltage as low as 4V.
  • Halogen Free Compliance: Meets environmental standards by being halogen-free.
  • High Current Handling: Continuous drain current of 4.5A and pulse current up to 18A.

Applications

The CPH6444-TL-W is suitable for various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio amplifiers and power amplifiers.
  • General-purpose switching and power switching circuits.

Q & A

  1. What is the maximum drain-source voltage of the CPH6444-TL-W?
    The maximum drain-source voltage (VDSS) is 60V.
  2. What is the continuous drain current rating of the CPH6444-TL-W?
    The continuous drain current (ID) is 4.5A.
  3. What is the typical on-resistance of the CPH6444-TL-W?
    The typical on-resistance (RDS(on)) is 78mΩ at VGS=10V and ID=2A.
  4. Does the CPH6444-TL-W have a built-in protection diode?
    Yes, it has an integrated protection diode.
  5. What is the gate-source voltage range for the CPH6444-TL-W?
    The gate-source voltage (VGSS) range is ±20V.
  6. What is the allowable power dissipation for the CPH6444-TL-W when mounted on a ceramic substrate?
    The allowable power dissipation (PD) is 1.6W when mounted on a ceramic substrate (900mm²×0.8mm).
  7. What are the storage temperature limits for the CPH6444-TL-W?
    The storage temperature (Tstg) range is -55 to +150°C.
  8. Is the CPH6444-TL-W halogen-free?
    Yes, the CPH6444-TL-W is halogen-free.
  9. What is the package type for the CPH6444-TL-W?
    The package types include SC-74, SOT-26, and SOT-457.
  10. What are some common applications for the CPH6444-TL-W?
    Common applications include power supplies, DC-DC converters, motor control, audio amplifiers, and general-purpose switching circuits.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:78mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:505 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-CPH
Package / Case:SOT-23-6
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Same Series
CPH6444-TL-E
CPH6444-TL-E
MOSFET N-CH 60V 4.5A 6CPH

Similar Products

Part Number CPH6444-TL-W CPH6445-TL-W CPH6442-TL-W CPH6443-TL-W CPH6444-TL-E
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 35 V 60 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) 3.5A (Ta) 6A (Ta) 6A (Ta) 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 4V, 10V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 78mOhm @ 2A, 10V 117mOhm @ 1.5A, 10V 43mOhm @ 3A, 10V 37mOhm @ 3A, 10V 78mOhm @ 2A, 10V
Vgs(th) (Max) @ Id - - 2.6V @ 1mA 2.6V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 6.8 nC @ 10 V 20 nC @ 10 V 10 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 505 pF @ 20 V 310 pF @ 20 V 1040 pF @ 20 V 470 pF @ 20 V 505 pF @ 20 V
FET Feature - - - - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-CPH 6-CPH 6-CPH 6-CPH 6-CPH
Package / Case SOT-23-6 SOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6

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