CPH6443-TL-W
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onsemi CPH6443-TL-W

Manufacturer No:
CPH6443-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 35V 6A 6CPH
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CPH6443-TL-W is a high-performance N-Channel Power MOSFET produced by onsemi. This device is fabricated using onsemi's advanced trench technology, which is designed to minimize gate charge and reduce on-resistance. The CPH6443-TL-W is ideal for applications requiring low power loss and high efficiency.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)35 V
Continuous Drain Current (Id) @ 25°C6 A
On-Resistance (Rds(on)) @ Id, Vgs37 mΩ @ 6 A, 10 V
Gate Charge (Qg) @ Vgs- @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4 V, 10 V
Power Dissipation (Max) @ Ta1.6 W
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Operating Temperature (TJ)-55°C to 150°C
Moisture Sensitivity Level (MSL)1 (Unlimited)

Key Features

  • Low on-resistance (Rds(on)) of 37 mΩ, reducing power loss and increasing efficiency.
  • High continuous drain current of 6 A, suitable for high-power applications.
  • Advanced trench technology for minimized gate charge and improved switching performance.
  • Compact SOT-23-6 package, ideal for space-constrained designs.
  • Wide operating temperature range from -55°C to 150°C.
  • Lead-free and RoHS compliant, ensuring environmental sustainability.

Applications

The CPH6443-TL-W is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power distribution.
  • Industrial control and automation.
  • Consumer electronics requiring high efficiency and low power loss.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the CPH6443-TL-W?
    The maximum drain to source voltage (Vdss) is 35 V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 6 A.
  3. What is the on-resistance (Rds(on)) of the CPH6443-TL-W?
    The on-resistance (Rds(on)) is 37 mΩ at 6 A and 10 V.
  4. What is the gate charge (Qg) of the CPH6443-TL-W?
    The gate charge (Qg) is not specified in the provided sources, but it is typically low due to the trench technology used.
  5. What is the maximum power dissipation of the CPH6443-TL-W?
    The maximum power dissipation is 1.6 W at ambient temperature (Ta).
  6. What is the package type of the CPH6443-TL-W?
    The package type is SOT-23-6.
  7. Is the CPH6443-TL-W lead-free and RoHS compliant?
    Yes, the CPH6443-TL-W is lead-free and RoHS compliant.
  8. What is the operating temperature range of the CPH6443-TL-W?
    The operating temperature range is from -55°C to 150°C.
  9. What are some common applications of the CPH6443-TL-W?
    Common applications include power supplies, motor control, automotive systems, industrial control, and consumer electronics.
  10. What is the moisture sensitivity level (MSL) of the CPH6443-TL-W?
    The moisture sensitivity level (MSL) is 1 (Unlimited).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):35 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:37mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-CPH
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
CPH6443-TL-H
CPH6443-TL-H
MOSFET N-CH 35V 6A 6CPH

Similar Products

Part Number CPH6443-TL-W CPH6445-TL-W CPH6444-TL-W CPH6442-TL-W CPH6443-TL-H
Manufacturer onsemi onsemi onsemi onsemi Sanyo
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 35 V 60 V 60 V 60 V 35 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta) 3.5A (Ta) 4.5A (Ta) 6A (Ta) 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 4V, 10V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 37mOhm @ 3A, 10V 117mOhm @ 1.5A, 10V 78mOhm @ 2A, 10V 43mOhm @ 3A, 10V 37mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA - - 2.6V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 6.8 nC @ 10 V 10 nC @ 10 V 20 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 20 V 310 pF @ 20 V 505 pF @ 20 V 1040 pF @ 20 V 470 pF @ 20 V
FET Feature - - - - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-CPH 6-CPH 6-CPH 6-CPH 6-CPH
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 SOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6

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