CPH6445-TL-W
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onsemi CPH6445-TL-W

Manufacturer No:
CPH6445-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 3.5A 6CPH
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CPH6445-TL-W is an N-Channel Power MOSFET produced by onsemi, designed for general-purpose applications requiring fast switching and low on-resistance. This device is packaged in the SOT-26 (SC-74) package and is available in both lead-free and halogen-free versions. It is suitable for a wide range of applications due to its robust specifications and features.

Key Specifications

ParameterSymbolConditionsRatingsUnit
Drain-to-Source VoltageVDSS-60V
Gate-to-Source VoltageVGSS-±20V
Drain Current (DC)ID-3.5A
Drain Current (Pulse)IDPPW≤10ms, duty cycle≤1%14A
Allowable Power DissipationPDWhen mounted on ceramic substrate (1200mm²×0.8mm)1.6W
Channel TemperatureTch-150°C
Storage TemperatureTstg--55 to +150°C
Static Drain-to-Source On-State ResistanceRDS(on)ID=1.5A, VGS=10V92-117mΩ
Input CapacitanceCissVDS=20V, f=1MHz310pF
Output CapacitanceCoss-40pF
Reverse Transfer CapacitanceCrss-25pF

Key Features

  • 4V Drive Capability: The CPH6445 can be driven with a gate voltage as low as 4V, making it compatible with a variety of control circuits.
  • Low ON-Resistance: With a typical on-resistance of 92-117 mΩ at VGS=10V and ID=1.5A, this MOSFET minimizes power losses during operation.
  • Protection Diode: The device includes an internal protection diode, enhancing its reliability and protection against reverse voltage conditions.
  • Fast Switching Times: The MOSFET features fast switching times, including a turn-on delay time of 6.0 ns, rise time of 5.5 ns, turn-off delay time of 27 ns, and fall time of 13 ns.
  • Compact Package: The SOT-26 package is compact and suitable for space-constrained designs.

Applications

The CPH6445-TL-W is versatile and can be used in various applications, including:

  • Power Switching: Ideal for power switching in DC-DC converters, motor control, and power management systems.
  • Audio Amplifiers: Suitable for use in audio amplifiers due to its low on-resistance and fast switching times.
  • General Purpose Switching: Can be used in general-purpose switching applications where low on-resistance and fast switching are required.
  • Automotive Systems: Applicable in automotive systems for various control and switching functions.

Q & A

  1. What is the maximum drain-to-source voltage of the CPH6445-TL-W?
    The maximum drain-to-source voltage (VDSS) is 60V.
  2. What is the continuous drain current rating of the CPH6445-TL-W?
    The continuous drain current (ID) is 3.5A.
  3. What is the typical on-resistance of the CPH6445-TL-W?
    The typical on-resistance (RDS(on)) is 92-117 mΩ at VGS=10V and ID=1.5A.
  4. Does the CPH6445-TL-W have an internal protection diode?
    Yes, the device includes an internal protection diode.
  5. What is the package type of the CPH6445-TL-W?
    The package type is SOT-26 (SC-74).
  6. What are the storage temperature limits for the CPH6445-TL-W?
    The storage temperature range is -55°C to +150°C.
  7. What is the allowable power dissipation when mounted on a ceramic substrate?
    The allowable power dissipation (PD) is 1.6W when mounted on a ceramic substrate (1200mm²×0.8mm).
  8. What are the typical turn-on and turn-off delay times?
    The typical turn-on delay time (td(on)) is 6.0 ns, and the typical turn-off delay time (td(off)) is 27 ns.
  9. Is the CPH6445-TL-W available in lead-free and halogen-free versions?
    Yes, it is available in both lead-free and halogen-free versions.
  10. What is the minimum packing quantity for the CPH6445-TL-W?
    The minimum packing quantity is 3,000 pieces per reel.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:117mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-CPH
Package / Case:SOT-23-6
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Similar Products

Part Number CPH6445-TL-W CPH6442-TL-W CPH6443-TL-W CPH6444-TL-W CPH6445-TL-E
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 35 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) 6A (Ta) 6A (Ta) 4.5A (Ta) 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 4V, 10V 4V, 10V -
Rds On (Max) @ Id, Vgs 117mOhm @ 1.5A, 10V 43mOhm @ 3A, 10V 37mOhm @ 3A, 10V 78mOhm @ 2A, 10V 117mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id - 2.6V @ 1mA 2.6V @ 1mA - -
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V 20 nC @ 10 V 10 nC @ 10 V 10 nC @ 10 V 6.8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 20 V 1040 pF @ 20 V 470 pF @ 20 V 505 pF @ 20 V 310 pF @ 20 V
FET Feature - - - - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta) -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-CPH 6-CPH 6-CPH 6-CPH 6-CPH
Package / Case SOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 SOT-23-6

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