CPH6445-TL-E
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onsemi CPH6445-TL-E

Manufacturer No:
CPH6445-TL-E
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 60V 3.5A CPH6
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The CPH6445-TL-E is a high-performance N-Channel MOSFET produced by onsemi. This device is part of the PowerTrench® T1 family, known for its fast switching capabilities and robust design. The CPH6445-TL-E is designed for general usage across various applications, offering a balance of high current handling and low on-resistance.

Key Specifications

Parameter Value
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 3.5 A
Vgs - Gate-Source Voltage ±20 V
Rds(on) Max @ Vgs = 10 V 7500 mΩ
Package Type SOT-23 (TO-236)
Operating Temperature Range -55°C to 150°C

Key Features

  • High Drain-Source Breakdown Voltage: 60 V, ensuring robust operation under various conditions.
  • High Continuous Drain Current: 3.5 A, suitable for applications requiring substantial current handling.
  • Low On-Resistance: Rds(on) of 7500 mΩ at Vgs = 10 V, minimizing power losses and enhancing efficiency.
  • Fast Switching Capabilities: Part of the PowerTrench® T1 family, known for fast switching and low gate charge.
  • Compact Package: SOT-23 (TO-236) package, ideal for space-constrained designs.

Applications

  • General Purpose Switching: Suitable for various switching applications due to its fast switching and high current capabilities.
  • Power Management: Used in power management circuits, such as DC-DC converters and power supplies.
  • Automotive Systems: Can be used in automotive systems due to its robust design and wide operating temperature range.
  • Industrial Control Systems: Applicable in industrial control systems requiring reliable and efficient power handling.

Q & A

  1. What is the drain-source breakdown voltage of the CPH6445-TL-E?

    The drain-source breakdown voltage (Vds) is 60 V.

  2. What is the continuous drain current of the CPH6445-TL-E?

    The continuous drain current (Id) is 3.5 A.

  3. What is the maximum gate-source voltage for the CPH6445-TL-E?

    The maximum gate-source voltage (Vgs) is ±20 V.

  4. What is the on-resistance of the CPH6445-TL-E at Vgs = 10 V?

    The on-resistance (Rds(on)) at Vgs = 10 V is 7500 mΩ.

  5. What package type is the CPH6445-TL-E available in?

    The CPH6445-TL-E is available in the SOT-23 (TO-236) package.

  6. What is the operating temperature range of the CPH6445-TL-E?

    The operating temperature range is -55°C to 150°C.

  7. Is the CPH6445-TL-E suitable for high-frequency applications?

    Yes, it is suitable due to its fast switching capabilities.

  8. Can the CPH6445-TL-E be used in automotive systems?

    Yes, it can be used in automotive systems due to its robust design and wide operating temperature range.

  9. What are some common applications of the CPH6445-TL-E?

    Common applications include general purpose switching, power management, automotive systems, and industrial control systems.

  10. Where can I find detailed specifications and datasheets for the CPH6445-TL-E?

    Detailed specifications and datasheets can be found on the onsemi website, Mouser Electronics, Digi-Key, and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:117mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:6-CPH
Package / Case:SOT-23-6
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Similar Products

Part Number CPH6445-TL-E CPH6445-TL-W CPH6442-TL-E CPH6444-TL-E
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) 3.5A (Ta) 6A (Ta) 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4V, 10V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 117mOhm @ 1.5A, 10V 117mOhm @ 1.5A, 10V 43mOhm @ 3A, 10V 78mOhm @ 2A, 10V
Vgs(th) (Max) @ Id - - 2.6V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V 6.8 nC @ 10 V 20 nC @ 10 V 10 nC @ 10 V
Vgs (Max) - ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 20 V 310 pF @ 20 V 1040 pF @ 20 V 505 pF @ 20 V
FET Feature - - - -
Power Dissipation (Max) - 1.6W (Ta) 1.6W (Ta) 1.6W (Ta)
Operating Temperature - 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-CPH 6-CPH 6-CPH 6-CPH
Package / Case SOT-23-6 SOT-23-6 SOT-23-6 SOT-23-6

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