CPH3459-TL-W
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onsemi CPH3459-TL-W

Manufacturer No:
CPH3459-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 500MA 3CPH
Delivery:
Payment:
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Product Introduction

Overview

The CPH3459-TL-W is a single N-Channel Power MOSFET produced by onsemi. This component is designed for high-performance applications requiring low on-resistance and high current handling. The MOSFET features a logic level gate, making it compatible with a wide range of control signals. It is packaged in the SC-59 (SOT-23) package, which is compact and suitable for space-constrained designs.

Key Specifications

ParameterValue
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current @ 25°C500 mA
Rds On - Drain-Source Resistance @ Id, Vgs3.7 Ohms @ 250mA, 10V
Vgs - Gate-Source Voltage4V (Logic Level Gate)
PackageSC-59 (SOT-23)

Key Features

  • Logic Level Gate: Compatible with 4V drive voltage, making it suitable for a variety of control signals.
  • Low On-Resistance: Rds On of 3.7 Ohms at 250mA and 10V Vgs.
  • High Current Handling: Continuous drain current of 500 mA.
  • Compact Packaging: SC-59 (SOT-23) package for space-efficient designs.

Applications

The CPH3459-TL-W is suitable for a range of applications including but not limited to:

  • Power Management Systems
  • DC-DC Converters
  • Motor Control Circuits
  • Audio Amplifiers
  • General Purpose Switching

Q & A

  1. What is the drain-source breakdown voltage of the CPH3459-TL-W?
    The drain-source breakdown voltage is 200 V.
  2. What is the continuous drain current rating of the CPH3459-TL-W?
    The continuous drain current rating is 500 mA at 25°C.
  3. What is the typical on-resistance of the CPH3459-TL-W?
    The typical on-resistance is 3.7 Ohms at 250mA and 10V Vgs.
  4. What type of gate does the CPH3459-TL-W have?
    The CPH3459-TL-W has a logic level gate.
  5. What is the package type of the CPH3459-TL-W?
    The package type is SC-59 (SOT-23).
  6. What are some common applications for the CPH3459-TL-W?
    Common applications include power management systems, DC-DC converters, motor control circuits, audio amplifiers, and general purpose switching.
  7. What is the maximum gate-source voltage for the CPH3459-TL-W?
    The maximum gate-source voltage is typically compatible with 4V drive voltage.
  8. Is the CPH3459-TL-W suitable for high current applications?
    Yes, it is suitable for high current applications up to 500 mA.
  9. Where can I find detailed specifications for the CPH3459-TL-W?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.
  10. What are the benefits of using a logic level gate MOSFET like the CPH3459-TL-W?
    The benefits include compatibility with a wide range of control signals and easier integration into various electronic circuits.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:3.7Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:90 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-CPH
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number CPH3459-TL-W CPH3455-TL-W CPH3456-TL-W CPH3457-TL-W
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 35 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) 3A (Ta) 3.5A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 3.7Ohm @ 250mA, 10V 104mOhm @ 1.5A, 10V 71mOhm @ 1.5A, 4.5V 95mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA 1.3V @ 1mA 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 10 V 4 nC @ 10 V 2.8 nC @ 4.5 V 3.5 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 90 pF @ 20 V 186 pF @ 20 V 260 pF @ 10 V 265 pF @ 10 V
FET Feature - - - -
Power Dissipation (Max) 1W (Ta) 1W (Ta) 1W (Ta) 1W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 3-CPH 3-CPH 3-CPH 3-CPH
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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