Overview
The 2N7002-F169 is an N-Channel enhancement mode MOSFET produced by onsemi. This device is manufactured using onsemi’s proprietary, high cell density, DMOS technology. It is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. The 2N7002-F169 is particularly suited for low-voltage, low-current applications and can handle continuous drain currents up to 115 mA and pulsed currents up to 800 mA.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Drain-Gate Voltage | VDGR | 60 | V |
| Gate-Source Voltage (Continuous) | VGSS | ±20 | V |
| Gate-Source Voltage (Non-Repetitive, tp < 50 ms) | VGSS | ±40 | V |
| Maximum Drain Current (Continuous) | ID | 115 | mA |
| Maximum Drain Current (Pulsed) | IDM | 800 | mA |
| Maximum Power Dissipation | PD | 200 | mW |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C |
| Gate Threshold Voltage | VGS(th) | 1.0 to 2.5 | V |
| Static Drain-Source On-Resistance | RDS(on) | 7.5 | Ω |
Key Features
- High density cell design for low RDS(on)
- Voltage controlled small signal switch
- Rugged and reliable performance
- High saturation current capability
- ESD protection level: HBM > 100 V, CDM > 2 kV
- Pb-free and halogen-free package
- Fast switching speed
- Low input capacitance
- Small surface-mount package (SOT-23)
Applications
- Small servo motor control
- Power MOSFET gate drivers
- Low side load switch
- Level shift circuits
- DC-DC converters
- Portable applications such as DSC, PDA, and cell phones
- Other switching applications requiring low voltage and low current
Q & A
- What is the maximum drain-to-source voltage of the 2N7002-F169?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current rating of the 2N7002-F169?
The continuous drain current (ID) is 115 mA.
- What is the maximum pulsed drain current of the 2N7002-F169?
The maximum pulsed drain current (IDM) is 800 mA.
- What is the gate threshold voltage range of the 2N7002-F169?
The gate threshold voltage (VGS(th)) ranges from 1.0 to 2.5 V.
- What is the typical static drain-source on-resistance of the 2N7002-F169?
The typical static drain-source on-resistance (RDS(on)) is 7.5 Ω.
- Is the 2N7002-F169 Pb-free and halogen-free?
Yes, the 2N7002-F169 is Pb-free and halogen-free.
- What are some common applications for the 2N7002-F169?
Common applications include small servo motor control, power MOSFET gate drivers, low side load switches, level shift circuits, and DC-DC converters.
- What is the operating temperature range for the 2N7002-F169?
The operating and storage temperature range is -55 to 150°C.
- What package type is the 2N7002-F169 available in?
The 2N7002-F169 is available in a SOT-23 package.
- Does the 2N7002-F169 have ESD protection?
Yes, the 2N7002-F169 has ESD protection with HBM > 100 V and CDM > 2 kV.
