Overview
The BSH105,235 is an N-channel vertical D-MOS logic level Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component is designed and qualified for use in various applications, including computing, communications, and other electronic systems. It utilizes vertical D-MOS technology and is packaged in a SOT23 package, making it suitable for a wide range of electronic designs.
Key Specifications
| Parameter | Value |
|---|---|
| Type number | BSH105 |
| Package | SOT23 |
| Channel type | N-channel |
| VDS [max] (V) | 20 |
| VGS [max] (V) | 8 |
| RDSon [max] @ VGS = 4.5 V; @25°C (mΩ) | 200 |
| RDSon [max] @ VGS = 2.5 V (mΩ) | 250 |
| Tj [max] (°C) | 150 |
| ID [max] (A) | 1.05 |
| QGD [typ] (nC) | 1.4 |
| QG(tot) [typ] @ VGS = 4.5 V (nC) | 3.9 |
| Ptot [max] (W) | 0.17 |
| Qr [typ] (nC) | 19 |
| VGSth [typ] (V) | 0.57 |
| Automotive qualified | No |
| Ciss [typ] (pF) | 152 |
| Coss [typ] (pF) | 71 |
| Release date | 2011-01-24 |
Key Features
- Vertical D-MOS Technology: Enhances performance and efficiency in various applications.
- Logic Level FET: Suitable for use in logic level gate drive applications.
- SOT23 Package: Compact package size, ideal for space-constrained designs.
- Low RDSon: Offers low on-state resistance, reducing power losses.
- High Current Capability: Maximum drain current of 1.05 A.
- High Junction Temperature: Maximum junction temperature of 150°C, ensuring reliability in demanding environments.
Applications
- Computing and Communications: Suitable for use in various computing and communication systems.
- Industrial and Power Applications: Used in power supplies, motor drives, and other industrial equipment.
- Consumer Electronics: Found in mobile and consumer electronic devices.
- Automotive Electronics: Although not automotive qualified, it can be used in non-critical automotive applications.
- Wearables and IoT Devices: Compact size and low power consumption make it suitable for wearables and IoT applications.
Q & A
- What is the BSH105,235?
The BSH105,235 is an N-channel vertical D-MOS logic level Field-Effect Transistor (FET) produced by Nexperia USA Inc.
- What package type does the BSH105,235 use?
The BSH105,235 is packaged in a SOT23 package.
- What is the maximum drain-source voltage (VDS) for the BSH105,235?
The maximum drain-source voltage (VDS) is 20 V.
- What is the maximum gate-source voltage (VGS) for the BSH105,235?
The maximum gate-source voltage (VGS) is 8 V.
- What is the typical on-state resistance (RDSon) at VGS = 4.5 V?
The typical on-state resistance (RDSon) at VGS = 4.5 V is 200 mΩ.
- What is the maximum junction temperature (Tj) for the BSH105,235?
The maximum junction temperature (Tj) is 150°C.
- What is the maximum drain current (ID) for the BSH105,235?
The maximum drain current (ID) is 1.05 A.
- Is the BSH105,235 automotive qualified?
No, the BSH105,235 is not automotive qualified.
- What are some common applications for the BSH105,235?
Common applications include computing, communications, industrial and power applications, consumer electronics, and wearables.
- How can I order samples of the BSH105,235?
Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.
