BSH103,235
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Nexperia USA Inc. BSH103,235

Manufacturer No:
BSH103,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 850MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH103,235 is an N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This MOSFET is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed for high-performance and efficiency in various electronic applications.

Key Specifications

Parameter Value Unit
VDS (max) 30 V
VGS (max) 8 V
ID (max) 850 mA
RDS(on) (typ) @ VGS = 4.5V 400
Vth (typ) 400 mV
Ptot (max) 0.5 W
Tj (max) 150 °C
QGD (typ) 0.67 nC
QG(tot) (typ) @ VGS = 4.5V 2.1 nC
Ciss (typ) 83 pF
Coss (typ) 27 pF

Key Features

  • Very low threshold voltage: Ensures low gate drive requirements.
  • High-speed switching: Suitable for applications requiring fast switching times.
  • No secondary breakdown: Enhances reliability and robustness.
  • Direct interface to C-MOS, TTL, etc.: Compatible with various logic families.
  • Battery powered applications: Ideal for use in battery-powered devices due to low power consumption.
  • General purpose switching and power management: Versatile for a wide range of applications.

Applications

  • Battery powered applications: Suitable for devices such as smartphones, tablets, and other portable electronics.
  • DC-to-DC converters: Used in power supply circuits for efficient voltage conversion.
  • General purpose switching: Applicable in various switching circuits and logic interfaces.
  • Power management: Used in power management ICs and circuits to optimize power efficiency.
  • Automotive and industrial applications: Although not automotive qualified, it can be used in non-critical automotive and industrial applications where high performance is required.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSH103,235?

    The maximum drain-source voltage (VDS) is 30V.

  2. What is the typical on-resistance (RDS(on)) of the BSH103,235 at VGS = 4.5V?

    The typical on-resistance (RDS(on)) at VGS = 4.5V is 400 mΩ.

  3. What is the maximum drain current (ID) of the BSH103,235?

    The maximum drain current (ID) is 850 mA.

  4. What is the package type of the BSH103,235?

    The BSH103,235 is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  5. Is the BSH103,235 automotive qualified?

    No, the BSH103,235 is not automotive qualified.

  6. What are some typical applications of the BSH103,235?

    Typical applications include battery powered devices, DC-to-DC converters, general purpose switching, and power management.

  7. What is the maximum junction temperature (Tj) of the BSH103,235?

    The maximum junction temperature (Tj) is 150°C.

  8. What is the typical gate-source threshold voltage (Vth) of the BSH103,235?

    The typical gate-source threshold voltage (Vth) is 400 mV.

  9. Is the BSH103,235 RoHS compliant?
  10. What is the maximum total power dissipation (Ptot) of the BSH103,235?

    The maximum total power dissipation (Ptot) is 0.5 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V
Rds On (Max) @ Id, Vgs:400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:400mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs:2.1 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:83 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):540mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSH103,235
BSH103,235
MOSFET N-CH 30V 850MA TO236AB

Similar Products

Part Number BSH103,235 BSH105,235 BSH103,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Not For New Designs Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 850mA (Ta) 1.05A (Ta) 850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V 1.8V, 4.5V 2.5V
Rds On (Max) @ Id, Vgs 400mOhm @ 500mA, 4.5V 200mOhm @ 600mA, 4.5V 400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 400mV @ 1mA (Min) 570mV @ 1mA (Typ) 400mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs 2.1 nC @ 4.5 V 3.9 nC @ 4.5 V 2.1 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 83 pF @ 24 V 152 pF @ 16 V 83 pF @ 24 V
FET Feature - - -
Power Dissipation (Max) 540mW (Ta) 417mW (Ta) 540mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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