BSH103,215
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Nexperia USA Inc. BSH103,215

Manufacturer No:
BSH103,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 850MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH103,215 is a high-performance N-channel MOSFET manufactured by Nexperia USA Inc. This component is designed for small signal applications and is packaged in a compact SOT23-3 (TO-236AB) package. It is known for its ability to handle high currents and voltages, making it suitable for a variety of electronic systems.

Key Specifications

Specification Value
Manufacturer Nexperia USA Inc.
Package SOT23-3 (TO-236AB)
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 850 mA
Rds On - Drain-Source Resistance 400 mOhms
Vgs - Gate-Source Voltage -8 V, +8 V
Threshold Voltage 400 mV
Qg - Gate Charge 2.1 nC
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) +150
Pd - Power Dissipation 750 mW
Channel Mode Enhancement
Factory Pack Quantity 3000
Orderable part number 934054713215
Unit Weight 0.000282 oz

Key Features

  • High Performance: The BSH103,215 is designed for high-performance applications, offering a continuous drain current of 850 mA and a drain-source breakdown voltage of 30 V.
  • Compact Package: It is packaged in a SOT23-3 (TO-236AB) package, making it ideal for space-constrained designs.
  • Low On-Resistance: The component features a low drain-source on-resistance of 400 mOhms, which helps in reducing power losses.
  • Wide Operating Temperature Range: It operates over a wide temperature range from -55°C to +150°C, making it suitable for various environmental conditions.
  • RoHS Compliance: The BSH103,215 is RoHS compliant, ensuring it meets the regulatory requirements for the use of hazardous substances in electrical and electronic equipment.

Applications

The BSH103,215 is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Due to its robust performance and wide operating temperature range, it is suitable for automotive electronics.
  • Industrial Control Systems: It can be used in industrial control systems where high reliability and performance are required.
  • Consumer Electronics: The component is also used in consumer electronics for power management and switching applications.
  • Power Management: It is used in power management circuits to control and switch power efficiently.

Q & A

  1. What is the part number of this MOSFET?

    The part number of this MOSFET is BSH103,215.

  2. Who is the manufacturer of the BSH103,215?

    The BSH103,215 is manufactured by Nexperia USA Inc.

  3. What is the package type of the BSH103,215?

    The BSH103,215 is packaged in a SOT23-3 (TO-236AB) package.

  4. What is the continuous drain current of the BSH103,215?

    The continuous drain current of the BSH103,215 is 850 mA.

  5. What is the drain-source breakdown voltage of the BSH103,215?

    The drain-source breakdown voltage of the BSH103,215 is 30 V.

  6. What is the on-resistance of the BSH103,215?

    The on-resistance of the BSH103,215 is 400 mOhms.

  7. What is the operating temperature range of the BSH103,215?

    The operating temperature range of the BSH103,215 is from -55°C to +150°C.

  8. Is the BSH103,215 RoHS compliant?

    Yes, the BSH103,215 is RoHS compliant.

  9. What is the power dissipation of the BSH103,215?

    The power dissipation of the BSH103,215 is 750 mW.

  10. What is the channel mode of the BSH103,215?

    The channel mode of the BSH103,215 is enhancement.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V
Rds On (Max) @ Id, Vgs:400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:400mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs:2.1 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:83 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):540mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSH103,235
BSH103,235
MOSFET N-CH 30V 850MA TO236AB

Similar Products

Part Number BSH103,215 BSH105,215 BSH103,235 BSH203,215 BSH108,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Not For New Designs Not For New Designs Active Active
FET Type N-Channel N-Channel N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 850mA (Ta) 1.05A (Ta) 850mA (Ta) 470mA (Ta) 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V 1.8V, 4.5V 2.5V 1.8V, 4.5V 5V, 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 500mA, 4.5V 200mOhm @ 600mA, 4.5V 400mOhm @ 500mA, 4.5V 900mOhm @ 280mA, 4.5V 120mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 400mV @ 1mA (Min) 570mV @ 1mA (Typ) 400mV @ 1mA (Min) 680mV @ 1mA (Typ) 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.1 nC @ 4.5 V 3.9 nC @ 4.5 V 2.1 nC @ 4.5 V 2.2 nC @ 4.5 V 10 nC @ 10 V
Vgs (Max) ±8V ±8V ±8V ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 83 pF @ 24 V 152 pF @ 16 V 83 pF @ 24 V 110 pF @ 24 V 190 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 540mW (Ta) 417mW (Ta) 540mW (Ta) 417mW (Ta) 830mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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