BSH108,215
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Nexperia USA Inc. BSH108,215

Manufacturer No:
BSH108,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 1.9A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BSH108,215 is an N-channel power MOSFET produced by Nexperia USA Inc. This component is designed for a variety of applications requiring efficient power management. It features a compact SOT-23 surface mount package, making it suitable for space-constrained designs. The MOSFET is known for its high performance and reliability, making it a popular choice in modern electronic systems.

Key Specifications

ParameterValue
Channel TypeN-Channel
Drain-Source Breakdown Voltage (Vds)30 V
Continuous Drain Current (Id)1.9 A at 25°C
On-State Resistance (Rds(on))0.077 ohm
Package TypeSOT-23, Surface Mount
Operating Temperature Range-55°C to 150°C

Key Features

  • High efficiency with low on-state resistance (Rds(on)) of 0.077 ohm.
  • Compact SOT-23 surface mount package for space-saving designs.
  • High drain-source breakdown voltage of 30 V.
  • Continuous drain current of 1.9 A at 25°C.
  • Wide operating temperature range from -55°C to 150°C.

Applications

The BSH108,215 N-channel MOSFET is suitable for various applications including but not limited to:

  • Power switching and power management in consumer electronics.
  • Automotive systems requiring high reliability and efficiency.
  • Industrial control systems and motor control applications.
  • Battery management and charging circuits.

Q & A

  1. What is the channel type of the BSH108,215 MOSFET? The BSH108,215 is an N-channel MOSFET.
  2. What is the drain-source breakdown voltage of the BSH108,215? The drain-source breakdown voltage is 30 V.
  3. What is the continuous drain current of the BSH108,215 at 25°C? The continuous drain current is 1.9 A at 25°C.
  4. What is the on-state resistance (Rds(on)) of the BSH108,215? The on-state resistance is 0.077 ohm.
  5. What is the package type of the BSH108,215? The package type is SOT-23, surface mount.
  6. What is the operating temperature range of the BSH108,215? The operating temperature range is from -55°C to 150°C.
  7. Where can the BSH108,215 be used? It can be used in power switching, automotive systems, industrial control systems, and battery management circuits.
  8. Why is the BSH108,215 preferred in many applications? It is preferred due to its high efficiency, compact package, and high reliability.
  9. Can the BSH108,215 be used in high-power applications? Yes, it can be used in high-power applications due to its high drain current and low on-state resistance.
  10. Is the BSH108,215 suitable for space-constrained designs? Yes, it is suitable due to its compact SOT-23 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:120mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSH108,215 BSH103,215 BSH105,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Not For New Designs Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) 850mA (Ta) 1.05A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 2.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 10V 400mOhm @ 500mA, 4.5V 200mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA 400mV @ 1mA (Min) 570mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 2.1 nC @ 4.5 V 3.9 nC @ 4.5 V
Vgs (Max) ±20V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 10 V 83 pF @ 24 V 152 pF @ 16 V
FET Feature - - -
Power Dissipation (Max) 830mW (Tc) 540mW (Ta) 417mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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