BSH105,215
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Nexperia USA Inc. BSH105,215

Manufacturer No:
BSH105,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 1.05A TO236AB
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The BSH105,215 is an N-channel vertical D-MOS logic level Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device is designed and qualified for use in various applications including computing, communications, consumer, and industrial sectors. It utilizes vertical D-MOS technology and is packaged in a compact SOT23 package, making it ideal for space-constrained designs.

Key Specifications

ParameterValue
Type NumberBSH105
Orderable Part NumberBSH105,215
PackageSOT23
Drain-Source Voltage (Vds)20 V
Gate-Source Voltage (Vgs)8 V
Continuous Drain Current (Id)1.05 A
Pulsed Drain Current (Id)3.9 A
On-State Resistance (Rds(on))0.17 Ω
Threshold Voltage (Vth)0.57 V to 1.4 V

Key Features

  • Saves PCB space due to its small footprint in the SOT23 package.
  • Suitable for high-frequency applications due to its fast switching characteristics.
  • Compatible with logic level gate drive sources and very low gate drive source voltages.
  • Ideal for battery-powered applications.
  • High-speed digital interfaces support.

Applications

The BSH105,215 is versatile and can be used in a variety of applications, including:

  • Computing devices
  • Communication systems
  • Consumer electronics
  • Industrial control systems
  • Battery-powered devices
  • High-speed digital interfaces

Q & A

  1. What is the BSH105,215? The BSH105,215 is an N-channel vertical D-MOS logic level Field-Effect Transistor (FET) produced by Nexperia USA Inc.
  2. What package type does the BSH105,215 use? The BSH105,215 is packaged in a SOT23 package.
  3. What are the typical applications for the BSH105,215? It is used in computing, communications, consumer, and industrial applications.
  4. What is the maximum drain-source voltage (Vds) of the BSH105,215? The maximum drain-source voltage is 20 V.
  5. What is the on-state resistance (Rds(on)) of the BSH105,215? The on-state resistance is 0.17 Ω.
  6. Is the BSH105,215 suitable for high-frequency applications? Yes, it is suitable due to its fast switching characteristics.
  7. Can the BSH105,215 be used in battery-powered devices? Yes, it is ideal for battery-powered applications.
  8. What is the threshold voltage range of the BSH105,215? The threshold voltage range is from 0.57 V to 1.4 V.
  9. How can I obtain samples of the BSH105,215? Samples can be ordered via Nexperia’s sales organization or through their network of global and regional distributors.
  10. Are there any evaluation boards available for the BSH105,215? Yes, Nexperia offers various evaluation boards to test the performance of their MOSFETs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.05A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:200mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:570mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:3.9 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:152 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):417mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

$0.38
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Same Series
BSH105,235
BSH105,235
MOSFET N-CH 20V 1.05A TO236AB

Similar Products

Part Number BSH105,215 BSH105,235 BSH108,215 BSH205,215 BSH103,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Not For New Designs Active Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 30 V 12 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.05A (Ta) 1.05A (Ta) 1.9A (Tc) 750mA (Ta) 850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 5V, 10V 1.8V, 4.5V 2.5V
Rds On (Max) @ Id, Vgs 200mOhm @ 600mA, 4.5V 200mOhm @ 600mA, 4.5V 120mOhm @ 1A, 10V 400mOhm @ 430mA, 4.5V 400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 570mV @ 1mA (Typ) 570mV @ 1mA (Typ) 2V @ 1mA 680mV @ 1mA (Typ) 400mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs 3.9 nC @ 4.5 V 3.9 nC @ 4.5 V 10 nC @ 10 V 3.8 nC @ 4.5 V 2.1 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±20V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 152 pF @ 16 V 152 pF @ 16 V 190 pF @ 10 V 200 pF @ 9.6 V 83 pF @ 24 V
FET Feature - - - - -
Power Dissipation (Max) 417mW (Ta) 417mW (Ta) 830mW (Tc) 417mW (Ta) 540mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB SOT-23 (TO-236AB) TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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