BSH105,215
  • Share:

Nexperia USA Inc. BSH105,215

Manufacturer No:
BSH105,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 1.05A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH105,215 is an N-channel vertical D-MOS logic level Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device is designed and qualified for use in various applications including computing, communications, consumer, and industrial sectors. It utilizes vertical D-MOS technology and is packaged in a compact SOT23 package, making it ideal for space-constrained designs.

Key Specifications

ParameterValue
Type NumberBSH105
Orderable Part NumberBSH105,215
PackageSOT23
Drain-Source Voltage (Vds)20 V
Gate-Source Voltage (Vgs)8 V
Continuous Drain Current (Id)1.05 A
Pulsed Drain Current (Id)3.9 A
On-State Resistance (Rds(on))0.17 Ω
Threshold Voltage (Vth)0.57 V to 1.4 V

Key Features

  • Saves PCB space due to its small footprint in the SOT23 package.
  • Suitable for high-frequency applications due to its fast switching characteristics.
  • Compatible with logic level gate drive sources and very low gate drive source voltages.
  • Ideal for battery-powered applications.
  • High-speed digital interfaces support.

Applications

The BSH105,215 is versatile and can be used in a variety of applications, including:

  • Computing devices
  • Communication systems
  • Consumer electronics
  • Industrial control systems
  • Battery-powered devices
  • High-speed digital interfaces

Q & A

  1. What is the BSH105,215? The BSH105,215 is an N-channel vertical D-MOS logic level Field-Effect Transistor (FET) produced by Nexperia USA Inc.
  2. What package type does the BSH105,215 use? The BSH105,215 is packaged in a SOT23 package.
  3. What are the typical applications for the BSH105,215? It is used in computing, communications, consumer, and industrial applications.
  4. What is the maximum drain-source voltage (Vds) of the BSH105,215? The maximum drain-source voltage is 20 V.
  5. What is the on-state resistance (Rds(on)) of the BSH105,215? The on-state resistance is 0.17 Ω.
  6. Is the BSH105,215 suitable for high-frequency applications? Yes, it is suitable due to its fast switching characteristics.
  7. Can the BSH105,215 be used in battery-powered devices? Yes, it is ideal for battery-powered applications.
  8. What is the threshold voltage range of the BSH105,215? The threshold voltage range is from 0.57 V to 1.4 V.
  9. How can I obtain samples of the BSH105,215? Samples can be ordered via Nexperia’s sales organization or through their network of global and regional distributors.
  10. Are there any evaluation boards available for the BSH105,215? Yes, Nexperia offers various evaluation boards to test the performance of their MOSFETs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.05A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:200mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:570mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:3.9 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:152 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):417mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.38
1,772

Please send RFQ , we will respond immediately.

Same Series
BSH105,215
BSH105,215
MOSFET N-CH 20V 1.05A TO236AB

Similar Products

Part Number BSH105,215 BSH105,235 BSH108,215 BSH205,215 BSH103,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Not For New Designs Active Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 30 V 12 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.05A (Ta) 1.05A (Ta) 1.9A (Tc) 750mA (Ta) 850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 5V, 10V 1.8V, 4.5V 2.5V
Rds On (Max) @ Id, Vgs 200mOhm @ 600mA, 4.5V 200mOhm @ 600mA, 4.5V 120mOhm @ 1A, 10V 400mOhm @ 430mA, 4.5V 400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 570mV @ 1mA (Typ) 570mV @ 1mA (Typ) 2V @ 1mA 680mV @ 1mA (Typ) 400mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs 3.9 nC @ 4.5 V 3.9 nC @ 4.5 V 10 nC @ 10 V 3.8 nC @ 4.5 V 2.1 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±20V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 152 pF @ 16 V 152 pF @ 16 V 190 pF @ 10 V 200 pF @ 9.6 V 83 pF @ 24 V
FET Feature - - - - -
Power Dissipation (Max) 417mW (Ta) 417mW (Ta) 830mW (Tc) 417mW (Ta) 540mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB SOT-23 (TO-236AB) TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
PESD2CANFD27V-QBZ
PESD2CANFD27V-QBZ
Nexperia USA Inc.
TVS DIODE 27VWM 44VC DFN1110D-3
BZX84J-B8V2,115
BZX84J-B8V2,115
Nexperia USA Inc.
DIODE ZENER 8.2V 550MW SOD323F
BC817-40QCH-QZ
BC817-40QCH-QZ
Nexperia USA Inc.
TRANS NPN 45V 0.5A DFN1412D-3
PBSS5540Z,115
PBSS5540Z,115
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
PBSS4160TVL
PBSS4160TVL
Nexperia USA Inc.
TRANS NPN 60V 1A TO236AB
PDTD123YT/APGR
PDTD123YT/APGR
Nexperia USA Inc.
PDTD123YT/APGR
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
74HCT245D,652
74HCT245D,652
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20SO
74HCT04PW,118
74HCT04PW,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14TSSOP
BZV55-C39
BZV55-C39
Nexperia USA Inc.
BZV55 SERIES - VOLTAGE REGULATOR
PDZ5.6BGW115
PDZ5.6BGW115
Nexperia USA Inc.
NOW NEXPERIA PDZ5.6BGW - ZENER D