BSH205,215
  • Share:

NXP USA Inc. BSH205,215

Manufacturer No:
BSH205,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 750MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH205,215 is a P-Channel MOSFET produced by NXP USA Inc. This component is part of NXP's extensive range of power MOSFETs, designed to provide high performance and reliability in various electronic applications. The BSH205,215 is housed in a SOT-23 package, making it suitable for space-constrained designs while offering robust electrical characteristics.

Key Specifications

Specification Value
Technology Silicon (Si)
Drain-Source Breakdown Voltage (Vds) 12 V
Continuous Drain Current (Id) @ 25°C 750 mA
Package Type SOT-23
RoHS Status Lead Free / RoHS Compliant

Key Features

  • P-Channel MOSFET: Suitable for applications requiring a P-Channel switch.
  • Low On-Resistance: Minimizes power losses and heat generation.
  • Compact SOT-23 Package: Ideal for space-constrained designs.
  • High Drain-Source Breakdown Voltage: Ensures reliability under various operating conditions.
  • RoHS Compliant: Environmentally friendly and compliant with international regulations.

Applications

  • Power Switching: Used in power management circuits for switching and control.
  • DC-DC Converters: Suitable for use in DC-DC converter circuits due to its high efficiency and low on-resistance.
  • Motor Control: Can be used in motor control circuits to manage power and speed.
  • General Purpose Switching: Applicable in various general-purpose switching applications where a P-Channel MOSFET is required.

Q & A

  1. What is the drain-source breakdown voltage of the BSH205,215 MOSFET?

    The drain-source breakdown voltage (Vds) of the BSH205,215 MOSFET is 12 V.

  2. What is the continuous drain current rating of the BSH205,215 at 25°C?

    The continuous drain current (Id) rating at 25°C is 750 mA.

  3. In what package is the BSH205,215 MOSFET available?

    The BSH205,215 MOSFET is available in a SOT-23 package.

  4. Is the BSH205,215 MOSFET RoHS compliant?

    Yes, the BSH205,215 MOSFET is lead-free and RoHS compliant.

  5. What are some common applications of the BSH205,215 MOSFET?

    Common applications include power switching, DC-DC converters, motor control, and general-purpose switching.

  6. What is the technology used in the BSH205,215 MOSFET?

    The BSH205,215 MOSFET uses silicon (Si) technology.

  7. Why is the SOT-23 package beneficial for the BSH205,215 MOSFET?

    The SOT-23 package is beneficial because it is compact, making it ideal for space-constrained designs.

  8. How does the low on-resistance of the BSH205,215 MOSFET benefit its applications?

    The low on-resistance minimizes power losses and heat generation, improving overall efficiency and reliability in power management circuits.

  9. Can the BSH205,215 MOSFET be used in high-power applications?

    While the BSH205,215 is suitable for various applications, its 750 mA continuous drain current rating suggests it is more suited for medium to low-power applications rather than high-power ones.

  10. Where can I find detailed specifications and datasheets for the BSH205,215 MOSFET?

    Detailed specifications and datasheets can be found on the official NXP website or through distributors like Mouser, Octopart, and Classic Components.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:400mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id:680mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:3.8 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 9.6 V
FET Feature:- 
Power Dissipation (Max):417mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.18
943

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BSH205,215 BSH105,215 BSH201,215 BSH202,215 BSH203,215
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Not For New Designs Not For New Designs Active Active
FET Type P-Channel N-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 20 V 60 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 750mA (Ta) 1.05A (Ta) 300mA (Ta) 520mA (Ta) 470mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V 4.5V, 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 400mOhm @ 430mA, 4.5V 200mOhm @ 600mA, 4.5V 2.5Ohm @ 160mA, 10V 900mOhm @ 280mA, 10V 900mOhm @ 280mA, 4.5V
Vgs(th) (Max) @ Id 680mV @ 1mA (Typ) 570mV @ 1mA (Typ) 1V @ 1mA (Min) 1.9V @ 1mA 680mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 4.5 V 3.9 nC @ 4.5 V 3 nC @ 10 V 2.9 nC @ 10 V 2.2 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±20V ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 9.6 V 152 pF @ 16 V 70 pF @ 48 V 80 pF @ 24 V 110 pF @ 24 V
FET Feature - - - - -
Power Dissipation (Max) 417mW (Ta) 417mW (Ta) 417mW (Ta) 417mW (Ta) 417mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23 (TO-236AB) TO-236AB TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BC856BT115
BC856BT115
NXP USA Inc.
TRANS PNP 65V 0.1A SC75
BUK7Y7R6-40E/GFX
BUK7Y7R6-40E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
PCF85063TP/1Z
PCF85063TP/1Z
NXP USA Inc.
IC RTC CLK/CALENDAR I2C 8-SON
TJA1048T,118
TJA1048T,118
NXP USA Inc.
IC TRANSCEIVER HALF 2/2 14SO
SC16C652BIB48,128
SC16C652BIB48,128
NXP USA Inc.
IC ENCODER/DECODER IRDA 48LQFP
TDF8532HH/N2K
TDF8532HH/N2K
NXP USA Inc.
BAP3 DIE1
74HCT4094D-Q100118
74HCT4094D-Q100118
NXP USA Inc.
SERIAL IN PARALLEL OUT
MC56F82723VLC557
MC56F82723VLC557
NXP USA Inc.
MICROCONTROLLER, 32-BIT, FLASH,
SPC5607BF1MLU6557
SPC5607BF1MLU6557
NXP USA Inc.
MICROCONTROLLER 32-BIT, POWER AR
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN
PN5120A0HN1/C1,118
PN5120A0HN1/C1,118
NXP USA Inc.
IC RFID RDR/TRAN 13.56MZ 32HVQFN