BSH205,215
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NXP USA Inc. BSH205,215

Manufacturer No:
BSH205,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 750MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH205,215 is a P-Channel MOSFET produced by NXP USA Inc. This component is part of NXP's extensive range of power MOSFETs, designed to provide high performance and reliability in various electronic applications. The BSH205,215 is housed in a SOT-23 package, making it suitable for space-constrained designs while offering robust electrical characteristics.

Key Specifications

Specification Value
Technology Silicon (Si)
Drain-Source Breakdown Voltage (Vds) 12 V
Continuous Drain Current (Id) @ 25°C 750 mA
Package Type SOT-23
RoHS Status Lead Free / RoHS Compliant

Key Features

  • P-Channel MOSFET: Suitable for applications requiring a P-Channel switch.
  • Low On-Resistance: Minimizes power losses and heat generation.
  • Compact SOT-23 Package: Ideal for space-constrained designs.
  • High Drain-Source Breakdown Voltage: Ensures reliability under various operating conditions.
  • RoHS Compliant: Environmentally friendly and compliant with international regulations.

Applications

  • Power Switching: Used in power management circuits for switching and control.
  • DC-DC Converters: Suitable for use in DC-DC converter circuits due to its high efficiency and low on-resistance.
  • Motor Control: Can be used in motor control circuits to manage power and speed.
  • General Purpose Switching: Applicable in various general-purpose switching applications where a P-Channel MOSFET is required.

Q & A

  1. What is the drain-source breakdown voltage of the BSH205,215 MOSFET?

    The drain-source breakdown voltage (Vds) of the BSH205,215 MOSFET is 12 V.

  2. What is the continuous drain current rating of the BSH205,215 at 25°C?

    The continuous drain current (Id) rating at 25°C is 750 mA.

  3. In what package is the BSH205,215 MOSFET available?

    The BSH205,215 MOSFET is available in a SOT-23 package.

  4. Is the BSH205,215 MOSFET RoHS compliant?

    Yes, the BSH205,215 MOSFET is lead-free and RoHS compliant.

  5. What are some common applications of the BSH205,215 MOSFET?

    Common applications include power switching, DC-DC converters, motor control, and general-purpose switching.

  6. What is the technology used in the BSH205,215 MOSFET?

    The BSH205,215 MOSFET uses silicon (Si) technology.

  7. Why is the SOT-23 package beneficial for the BSH205,215 MOSFET?

    The SOT-23 package is beneficial because it is compact, making it ideal for space-constrained designs.

  8. How does the low on-resistance of the BSH205,215 MOSFET benefit its applications?

    The low on-resistance minimizes power losses and heat generation, improving overall efficiency and reliability in power management circuits.

  9. Can the BSH205,215 MOSFET be used in high-power applications?

    While the BSH205,215 is suitable for various applications, its 750 mA continuous drain current rating suggests it is more suited for medium to low-power applications rather than high-power ones.

  10. Where can I find detailed specifications and datasheets for the BSH205,215 MOSFET?

    Detailed specifications and datasheets can be found on the official NXP website or through distributors like Mouser, Octopart, and Classic Components.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:400mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id:680mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:3.8 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 9.6 V
FET Feature:- 
Power Dissipation (Max):417mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSH205,215 BSH105,215 BSH201,215 BSH202,215 BSH203,215
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Not For New Designs Not For New Designs Active Active
FET Type P-Channel N-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 20 V 60 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 750mA (Ta) 1.05A (Ta) 300mA (Ta) 520mA (Ta) 470mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V 4.5V, 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 400mOhm @ 430mA, 4.5V 200mOhm @ 600mA, 4.5V 2.5Ohm @ 160mA, 10V 900mOhm @ 280mA, 10V 900mOhm @ 280mA, 4.5V
Vgs(th) (Max) @ Id 680mV @ 1mA (Typ) 570mV @ 1mA (Typ) 1V @ 1mA (Min) 1.9V @ 1mA 680mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 4.5 V 3.9 nC @ 4.5 V 3 nC @ 10 V 2.9 nC @ 10 V 2.2 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±20V ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 9.6 V 152 pF @ 16 V 70 pF @ 48 V 80 pF @ 24 V 110 pF @ 24 V
FET Feature - - - - -
Power Dissipation (Max) 417mW (Ta) 417mW (Ta) 417mW (Ta) 417mW (Ta) 417mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23 (TO-236AB) TO-236AB TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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