BSH201,215
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Nexperia USA Inc. BSH201,215

Manufacturer No:
BSH201,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 300MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BSH201,215 is a P-Channel MOSFET manufactured by Nexperia USA Inc. This small signal transistor is designed for various electronic applications requiring low power consumption and high efficiency. It features a compact SOT23-3 (TO-236AB) package, making it suitable for space-constrained designs. The MOSFET is part of Nexperia's extensive range of discrete semiconductor products, known for their reliability and performance.

Key Specifications

ParameterValue
ManufacturerNexperia USA Inc.
PackageSOT23-3 (TO-236AB)
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current300 mA
Rds On - Drain-Source Resistance2.5 Ohms
Vgs - Gate-Source Voltage-20 V to +20 V
Threshold Voltage1 V
Qg - Gate Charge3 nC
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Pd - Power Dissipation417 mW
Channel ModeEnhancement
Mounting StyleSMD/SMT
RoHS ComplianceYes

Key Features

  • Compact SOT23-3 (TO-236AB) package for space-efficient designs.
  • P-Channel MOSFET with a drain-source breakdown voltage of 60 V.
  • Continuous drain current of 300 mA and low on-resistance of 2.5 Ohms.
  • Gate-source voltage range of -20 V to +20 V with a threshold voltage of 1 V.
  • Low gate charge of 3 nC for efficient switching.
  • Wide operating temperature range from -55°C to +150°C.
  • Enhancement mode operation for reliable performance.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The BSH201,215 P-Channel MOSFET is suitable for a variety of applications, including:

  • Small signal switching and amplification.
  • Low power DC-DC converters and voltage regulators.
  • Audio and video equipment where low noise and high fidelity are required.
  • Automotive and industrial control systems needing compact and reliable components.
  • General-purpose electronics where space and power efficiency are critical.

Q & A

  1. What is the package type of the BSH201,215 MOSFET?
    The BSH201,215 MOSFET comes in a SOT23-3 (TO-236AB) package.
  2. What is the drain-source breakdown voltage of the BSH201,215?
    The drain-source breakdown voltage is 60 V.
  3. What is the continuous drain current of the BSH201,215?
    The continuous drain current is 300 mA.
  4. What is the on-resistance of the BSH201,215?
    The on-resistance (Rds On) is 2.5 Ohms.
  5. What is the gate-source voltage range of the BSH201,215?
    The gate-source voltage range is -20 V to +20 V.
  6. What is the threshold voltage of the BSH201,215?
    The threshold voltage is 1 V.
  7. What is the gate charge of the BSH201,215?
    The gate charge (Qg) is 3 nC.
  8. What is the operating temperature range of the BSH201,215?
    The operating temperature range is from -55°C to +150°C.
  9. Is the BSH201,215 RoHS compliant?
    Yes, the BSH201,215 is RoHS compliant.
  10. What are some typical applications of the BSH201,215?
    Typical applications include small signal switching, low power DC-DC converters, audio and video equipment, automotive and industrial control systems, and general-purpose electronics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id:1V @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs:3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:70 pF @ 48 V
FET Feature:- 
Power Dissipation (Max):417mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSH201,215 BSH203,215 BSH202,215 BSH205,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Not For New Designs Active Active Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 30 V 30 V 12 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 470mA (Ta) 520mA (Ta) 750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 1.8V, 4.5V 4.5V, 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 160mA, 10V 900mOhm @ 280mA, 4.5V 900mOhm @ 280mA, 10V 400mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA (Min) 680mV @ 1mA (Typ) 1.9V @ 1mA 680mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 3 nC @ 10 V 2.2 nC @ 4.5 V 2.9 nC @ 10 V 3.8 nC @ 4.5 V
Vgs (Max) ±20V ±8V ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 70 pF @ 48 V 110 pF @ 24 V 80 pF @ 24 V 200 pF @ 9.6 V
FET Feature - - - -
Power Dissipation (Max) 417mW (Ta) 417mW (Ta) 417mW (Ta) 417mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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