Overview
The BSH203,215 is a P-Channel enhancement mode MOSFET manufactured by Nexperia USA Inc. This device is packaged in a subminiature surface mount SOT23 package, making it ideal for applications where space is limited. The MOSFET features a low threshold voltage and extremely fast switching times, which are beneficial for battery-powered applications and high-speed digital interfacing.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Channel Type | P-Channel | |
Maximum Continuous Drain Current (Id) @ 25°C | 470 mA | |
Maximum Drain Source Voltage (Vdss) | 30 V | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8 V, 4.5 V | |
Gate Threshold Voltage (Vgs(th)) @ Id | 680 mV @ 1 mA | |
Gate Charge (Qg) @ Vgs | 2.2 nC @ 4.5 V | |
Input Capacitance (Ciss) @ Vds | 110 pF @ 24 V | |
Maximum Gate Source Voltage (Vgs) | ±8 V | |
Maximum Drain Source Resistance (Rds On) @ Id, Vgs | 900 mΩ @ 280 mA, 4.5 V | |
Power Dissipation (Max) | 417 mW (Ta) | |
Operating Temperature | -55°C to 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Key Features
- Low Threshold Voltage: The BSH203,215 has a low gate threshold voltage, making it suitable for logic level compatibility and efficient operation in battery-powered devices.
- Fast Switching Times: This MOSFET is characterized by extremely fast switching times, which are essential for high-speed digital applications.
- Subminiature Surface Mount Package: The SOT23 package is compact, ideal for applications where space is limited.
- High Efficiency: With a low gate charge and high efficiency, this MOSFET minimizes power losses and spiking.
- Wide Operating Temperature Range: The device operates over a temperature range of -55°C to 150°C, making it versatile for various environmental conditions.
Applications
- Battery-Powered Devices: The low threshold voltage and fast switching times make this MOSFET suitable for battery-powered applications such as portable electronics and mobile devices.
- High-Speed Digital Interfacing: Its fast switching capabilities are beneficial in high-speed digital circuits and interfaces.
- Automotive and Industrial Applications: The wide operating temperature range and high efficiency make it suitable for use in automotive and industrial environments.
- Consumer and Wearable Electronics: The compact SOT23 package and low power consumption make it ideal for consumer electronics and wearable devices.
Q & A
- What is the maximum continuous drain current of the BSH203,215 MOSFET?
The maximum continuous drain current is 470 mA at 25°C.
- What is the maximum drain-source voltage (Vdss) of the BSH203,215?
The maximum drain-source voltage is 30 V.
- What is the gate threshold voltage (Vgs(th)) of the BSH203,215?
The gate threshold voltage is 680 mV at 1 mA.
- What is the package type of the BSH203,215 MOSFET?
The package type is SOT23 (TO-236-3, SC-59, SOT-23-3).
- What is the operating temperature range of the BSH203,215?
The operating temperature range is -55°C to 150°C (TJ).
- Is the BSH203,215 suitable for high-speed digital applications?
Yes, it is suitable due to its fast switching times and logic level compatibility.
- What is the maximum power dissipation of the BSH203,215?
The maximum power dissipation is 417 mW (Ta).
- What is the maximum gate-source voltage (Vgs) of the BSH203,215?
The maximum gate-source voltage is ±8 V.
- Is the BSH203,215 available in surface mount packaging?
Yes, it is available in surface mount SOT23 packaging.
- What are some common applications of the BSH203,215 MOSFET?
Common applications include battery-powered devices, high-speed digital interfacing, automotive, industrial, consumer, and wearable electronics.