BSH202,215
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Nexperia USA Inc. BSH202,215

Manufacturer No:
BSH202,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 520MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH202,215 is a P-channel MOSFET produced by Nexperia USA Inc. This component is designed for use in a variety of electronic applications where a high-performance, low-power MOSFET is required. The BSH202,215 is packaged in the SOT-23 format, making it suitable for space-constrained designs. It is known for its high efficiency, low on-resistance, and robust performance characteristics.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)0.52 A
RDS(on) (On-Resistance)Typically 0.18 Ω at VGS = -4.5 V, ID = -0.25 A
VGS(th) (Threshold Voltage)-0.8 to -2.5 V
Ptot (Total Power Dissipation)1.3 W
PackageSOT-23

Key Features

  • High Efficiency: The BSH202,215 offers low on-resistance, which helps in reducing power losses and improving overall system efficiency.
  • Low Power Consumption: Designed for low-power applications, this MOSFET is ideal for battery-powered devices and energy-efficient systems.
  • Compact Packaging: The SOT-23 package makes it suitable for applications where space is limited.
  • Robust Performance: It provides reliable performance across a range of operating conditions.

Applications

  • Power Management: Used in power management circuits, such as voltage regulators and power switches.
  • Consumer Electronics: Suitable for use in portable electronics, audio equipment, and other consumer devices.
  • Automotive Systems: Can be used in automotive applications where low power consumption and high reliability are critical.
  • Industrial Control Systems: Applicable in industrial control systems, motor control, and other industrial automation applications.

Q & A

  1. What is the drain-source voltage rating of the BSH202,215 MOSFET?
    The drain-source voltage rating is 30 V.
  2. What is the continuous drain current of the BSH202,215?
    The continuous drain current is 0.52 A.
  3. What is the typical on-resistance of the BSH202,215?
    The typical on-resistance is 0.18 Ω at VGS = -4.5 V, ID = -0.25 A.
  4. What is the package type of the BSH202,215?
    The package type is SOT-23.
  5. What are some common applications of the BSH202,215?
    Common applications include power management, consumer electronics, automotive systems, and industrial control systems.
  6. Where can I purchase the BSH202,215 MOSFET?
    You can purchase the BSH202,215 from distributors such as Digi-Key, Mouser Electronics, and Newark/element14.
  7. What is the total power dissipation of the BSH202,215?
    The total power dissipation is 1.3 W.
  8. What is the threshold voltage range of the BSH202,215?
    The threshold voltage range is -0.8 to -2.5 V.
  9. Is the BSH202,215 suitable for high-frequency applications?
    While it can be used in various applications, it is primarily designed for low-power and general-purpose use rather than high-frequency applications.
  10. What are the benefits of using the BSH202,215 in power management circuits?
    The benefits include high efficiency, low power consumption, and robust performance, which are crucial for reliable power management.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:520mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:900mOhm @ 280mA, 10V
Vgs(th) (Max) @ Id:1.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:80 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):417mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSH202,215 BSH203,215 BSH205,215 BSH201,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Obsolete Not For New Designs
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 12 V 60 V
Current - Continuous Drain (Id) @ 25°C 520mA (Ta) 470mA (Ta) 750mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 280mA, 10V 900mOhm @ 280mA, 4.5V 400mOhm @ 430mA, 4.5V 2.5Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id 1.9V @ 1mA 680mV @ 1mA (Typ) 680mV @ 1mA (Typ) 1V @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs 2.9 nC @ 10 V 2.2 nC @ 4.5 V 3.8 nC @ 4.5 V 3 nC @ 10 V
Vgs (Max) ±20V ±8V ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 80 pF @ 24 V 110 pF @ 24 V 200 pF @ 9.6 V 70 pF @ 48 V
FET Feature - - - -
Power Dissipation (Max) 417mW (Ta) 417mW (Ta) 417mW (Ta) 417mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB SOT-23 (TO-236AB) TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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