SPW20N60C3FKSA1
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Infineon Technologies SPW20N60C3FKSA1

Manufacturer No:
SPW20N60C3FKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 650V 20.7A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The Infineon SPW20N60C3FKSA1 is a high-performance N-Channel MOSFET designed for various power management and switching applications. This device is part of Infineon's CoolMOS™ family, known for its advanced technology that offers improved efficiency and reliability. The SPW20N60C3FKSA1 features a drain-to-source voltage (Vdss) of 600 V, a drain-source on resistance (Rds(on)) of 0.19 Ω, and a maximum drain current of 20.7 A. These specifications make it suitable for demanding industrial and power electronics applications.

Key Specifications

AttributeValue
FET TypeN-Channel
No of Channels1
Drain-to-Source Voltage [Vdss]600 V
Drain-Source On Resistance-Max [Rds(on)]0.19 Ω
Rated Power Dissipation208 W
Gate Charge [Qg]114 nC
Gate-Source Voltage-Max [Vgss]20 V
Drain Current20.7 A
Turn-on Delay Time10 ns
Turn-off Delay Time67 ns
Rise Time5 ns
Fall Time4.5 ns
Operating Temp Range-55°C to +150°C
Gate Source Threshold3.9 V
TechnologyCoolMOS
Package StyleTO-247-3
Mounting MethodThrough Hole

Key Features

  • High peak current capability
  • Improved transconductance
  • Low on-resistance (Rds(on)) of 0.19 Ω
  • High drain-to-source voltage (Vdss) of 600 V
  • High power dissipation rating of 208 W
  • Fast switching times with turn-on delay of 10 ns and turn-off delay of 67 ns
  • Wide operating temperature range from -55°C to +150°C

Applications

The Infineon SPW20N60C3FKSA1 is designed for use in various industrial and power electronics applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Renewable energy systems
  • High-power switching and power management systems

Q & A

  1. What is the drain-to-source voltage (Vdss) of the SPW20N60C3FKSA1?
    The drain-to-source voltage (Vdss) is 600 V.
  2. What is the maximum drain current of the SPW20N60C3FKSA1?
    The maximum drain current is 20.7 A.
  3. What is the on-resistance (Rds(on)) of the SPW20N60C3FKSA1?
    The on-resistance (Rds(on)) is 0.19 Ω.
  4. What is the operating temperature range of the SPW20N60C3FKSA1?
    The operating temperature range is from -55°C to +150°C.
  5. What is the gate charge (Qg) of the SPW20N60C3FKSA1?
    The gate charge (Qg) is 114 nC.
  6. What is the package style of the SPW20N60C3FKSA1?
    The package style is TO-247-3.
  7. What is the mounting method of the SPW20N60C3FKSA1?
    The mounting method is Through Hole.
  8. What technology is used in the SPW20N60C3FKSA1?
    The technology used is CoolMOS.
  9. What are the typical applications of the SPW20N60C3FKSA1?
    Typical applications include power supplies, DC-DC converters, motor control, and renewable energy systems.
  10. What is the rated power dissipation of the SPW20N60C3FKSA1?
    The rated power dissipation is 208 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
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Similar Products

Part Number SPW20N60C3FKSA1 SPW24N60C3FKSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) 24.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V 160mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA 3.9V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V 135 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V 3000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 208W (Tc) 240W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3

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