SPW20N60C3FKSA1
  • Share:

Infineon Technologies SPW20N60C3FKSA1

Manufacturer No:
SPW20N60C3FKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 650V 20.7A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The Infineon SPW20N60C3FKSA1 is a high-performance N-Channel MOSFET designed for various power management and switching applications. This device is part of Infineon's CoolMOS™ family, known for its advanced technology that offers improved efficiency and reliability. The SPW20N60C3FKSA1 features a drain-to-source voltage (Vdss) of 600 V, a drain-source on resistance (Rds(on)) of 0.19 Ω, and a maximum drain current of 20.7 A. These specifications make it suitable for demanding industrial and power electronics applications.

Key Specifications

AttributeValue
FET TypeN-Channel
No of Channels1
Drain-to-Source Voltage [Vdss]600 V
Drain-Source On Resistance-Max [Rds(on)]0.19 Ω
Rated Power Dissipation208 W
Gate Charge [Qg]114 nC
Gate-Source Voltage-Max [Vgss]20 V
Drain Current20.7 A
Turn-on Delay Time10 ns
Turn-off Delay Time67 ns
Rise Time5 ns
Fall Time4.5 ns
Operating Temp Range-55°C to +150°C
Gate Source Threshold3.9 V
TechnologyCoolMOS
Package StyleTO-247-3
Mounting MethodThrough Hole

Key Features

  • High peak current capability
  • Improved transconductance
  • Low on-resistance (Rds(on)) of 0.19 Ω
  • High drain-to-source voltage (Vdss) of 600 V
  • High power dissipation rating of 208 W
  • Fast switching times with turn-on delay of 10 ns and turn-off delay of 67 ns
  • Wide operating temperature range from -55°C to +150°C

Applications

The Infineon SPW20N60C3FKSA1 is designed for use in various industrial and power electronics applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Renewable energy systems
  • High-power switching and power management systems

Q & A

  1. What is the drain-to-source voltage (Vdss) of the SPW20N60C3FKSA1?
    The drain-to-source voltage (Vdss) is 600 V.
  2. What is the maximum drain current of the SPW20N60C3FKSA1?
    The maximum drain current is 20.7 A.
  3. What is the on-resistance (Rds(on)) of the SPW20N60C3FKSA1?
    The on-resistance (Rds(on)) is 0.19 Ω.
  4. What is the operating temperature range of the SPW20N60C3FKSA1?
    The operating temperature range is from -55°C to +150°C.
  5. What is the gate charge (Qg) of the SPW20N60C3FKSA1?
    The gate charge (Qg) is 114 nC.
  6. What is the package style of the SPW20N60C3FKSA1?
    The package style is TO-247-3.
  7. What is the mounting method of the SPW20N60C3FKSA1?
    The mounting method is Through Hole.
  8. What technology is used in the SPW20N60C3FKSA1?
    The technology used is CoolMOS.
  9. What are the typical applications of the SPW20N60C3FKSA1?
    Typical applications include power supplies, DC-DC converters, motor control, and renewable energy systems.
  10. What is the rated power dissipation of the SPW20N60C3FKSA1?
    The rated power dissipation is 208 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$7.40
119

Please send RFQ , we will respond immediately.

Similar Products

Part Number SPW20N60C3FKSA1 SPW24N60C3FKSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) 24.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V 160mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA 3.9V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V 135 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V 3000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 208W (Tc) 240W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAT5404WH6327XTSA1
BAT5404WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT323
BAV70E6767
BAV70E6767
Infineon Technologies
GENERAL PURPOSE HIGH SPEED SWITC
BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
BC817K25E6327HTSA1
BC817K25E6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC817-16B5003
BC817-16B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23-3
BC859-C
BC859-C
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC857BE6327
BC857BE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
BC857BWE6327BTSA1
BC857BWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
IPG20N04S4L08ATMA1
IPG20N04S4L08ATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
IRS21867STRPBF
IRS21867STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
ICE2PCS02GXUMA1
ICE2PCS02GXUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO