IRFR9120NTRPBF
  • Share:

Infineon Technologies IRFR9120NTRPBF

Manufacturer No:
IRFR9120NTRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 6.6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFR9120NTRPBF is a 100V Single P-Channel IR MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is packaged in a D-Pak (TO-252) package, making it suitable for various applications such as DC motors, inverters, Switch Mode Power Supplies (SMPS), lighting, load switches, and battery-powered applications.

Key Specifications

ParameterValueUnits
Drain-Source Voltage (Vds)100V
Continuous Drain Current (ID) at TC = 25°C, VGS = -10V-6.6A
Continuous Drain Current (ID) at TC = 100°C, VGS = -10V-5.5A
Power Dissipation (Pd)39W
Package TypeD-Pak (TO-252)

Key Features

  • Planar cell structure for wide Safe Operating Area (SOA)
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100kHz
  • Industry standard surface mount package
  • Increased ruggedness
  • Standard pinout allows for drop-in replacement

Applications

The IRFR9120NTRPBF is suitable for a variety of applications, including:

  • DC motors
  • Inverters
  • Switch Mode Power Supplies (SMPS)
  • Lighting systems
  • Load switches
  • Battery-powered applications

Q & A

  1. What is the maximum drain-source voltage of the IRFR9120NTRPBF?
    The maximum drain-source voltage is 100V.
  2. What is the continuous drain current at 25°C with VGS = -10V?
    The continuous drain current at 25°C with VGS = -10V is -6.6A.
  3. What is the package type of the IRFR9120NTRPBF?
    The package type is D-Pak (TO-252).
  4. What are the typical applications of the IRFR9120NTRPBF?
    Typical applications include DC motors, inverters, SMPS, lighting systems, load switches, and battery-powered applications.
  5. Is the IRFR9120NTRPBF qualified according to any industry standards?
    Yes, it is qualified according to JEDEC standards.
  6. What is the power dissipation of the IRFR9120NTRPBF?
    The power dissipation is 39W.
  7. What is the cell structure of the IRFR9120NTRPBF?
    The cell structure is planar, providing a wide Safe Operating Area (SOA).
  8. Is the IRFR9120NTRPBF optimized for low-frequency applications?
    Yes, the silicon is optimized for applications switching below 100kHz.
  9. Does the IRFR9120NTRPBF have standard pinout for easy replacement?
    Yes, it has a standard pinout that allows for drop-in replacement.
  10. Where can I find the IRFR9120NTRPBF for purchase?
    The IRFR9120NTRPBF is available from various distributors such as Mouser, TME, and LCSC.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:480mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.03
18

Please send RFQ , we will respond immediately.

Same Series
IRFR9120NTRLPBF
IRFR9120NTRLPBF
MOSFET P-CH 100V 6.6A DPAK
IRFU9120NPBF
IRFU9120NPBF
MOSFET P-CH 100V 6.6A IPAK
IRFR9120NPBF
IRFR9120NPBF
MOSFET P-CH 100V 6.6A DPAK

Similar Products

Part Number IRFR9120NTRPBF IRFR9120TRPBF IRFR9120NTRLPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc) 5.6A (Tc) 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 480mOhm @ 3.9A, 10V 600mOhm @ 3.4A, 10V 480mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 18 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 390 pF @ 25 V 350 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 40W (Tc) 2.5W (Ta), 42W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK

Related Product By Brand

BAS7005E6433HTMA1
BAS7005E6433HTMA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BAV199E6359
BAV199E6359
Infineon Technologies
RECTIFIER, 2 ELEMENT, 0.2A, 80V
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BC850CE6327HTSA1
BC850CE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT-23
BC80725WE6327BTSA1
BC80725WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
IRF7342TRPBF
IRF7342TRPBF
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8-SOIC
FF600R12ME4PBOSA1
FF600R12ME4PBOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4CPBPSA1
FF600R12ME4CPBPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
IKW40N120H3FKSA1
IKW40N120H3FKSA1
Infineon Technologies
IGBT 1200V 80A 483W TO247-3
IRS20957STRPBF
IRS20957STRPBF
Infineon Technologies
IC AMP CLASS D MONO 16SOIC
BSP762TNT
BSP762TNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8