IRFR9120NTRPBF
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Infineon Technologies IRFR9120NTRPBF

Manufacturer No:
IRFR9120NTRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 6.6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The IRFR9120NTRPBF is a 100V Single P-Channel IR MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide portfolio of devices. This MOSFET is packaged in a D-Pak (TO-252) package, making it suitable for various applications such as DC motors, inverters, Switch Mode Power Supplies (SMPS), lighting, load switches, and battery-powered applications.

Key Specifications

ParameterValueUnits
Drain-Source Voltage (Vds)100V
Continuous Drain Current (ID) at TC = 25°C, VGS = -10V-6.6A
Continuous Drain Current (ID) at TC = 100°C, VGS = -10V-5.5A
Power Dissipation (Pd)39W
Package TypeD-Pak (TO-252)

Key Features

  • Planar cell structure for wide Safe Operating Area (SOA)
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100kHz
  • Industry standard surface mount package
  • Increased ruggedness
  • Standard pinout allows for drop-in replacement

Applications

The IRFR9120NTRPBF is suitable for a variety of applications, including:

  • DC motors
  • Inverters
  • Switch Mode Power Supplies (SMPS)
  • Lighting systems
  • Load switches
  • Battery-powered applications

Q & A

  1. What is the maximum drain-source voltage of the IRFR9120NTRPBF?
    The maximum drain-source voltage is 100V.
  2. What is the continuous drain current at 25°C with VGS = -10V?
    The continuous drain current at 25°C with VGS = -10V is -6.6A.
  3. What is the package type of the IRFR9120NTRPBF?
    The package type is D-Pak (TO-252).
  4. What are the typical applications of the IRFR9120NTRPBF?
    Typical applications include DC motors, inverters, SMPS, lighting systems, load switches, and battery-powered applications.
  5. Is the IRFR9120NTRPBF qualified according to any industry standards?
    Yes, it is qualified according to JEDEC standards.
  6. What is the power dissipation of the IRFR9120NTRPBF?
    The power dissipation is 39W.
  7. What is the cell structure of the IRFR9120NTRPBF?
    The cell structure is planar, providing a wide Safe Operating Area (SOA).
  8. Is the IRFR9120NTRPBF optimized for low-frequency applications?
    Yes, the silicon is optimized for applications switching below 100kHz.
  9. Does the IRFR9120NTRPBF have standard pinout for easy replacement?
    Yes, it has a standard pinout that allows for drop-in replacement.
  10. Where can I find the IRFR9120NTRPBF for purchase?
    The IRFR9120NTRPBF is available from various distributors such as Mouser, TME, and LCSC.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:480mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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Same Series
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IRFR9120NPBF
IRFR9120NPBF
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Similar Products

Part Number IRFR9120NTRPBF IRFR9120TRPBF IRFR9120NTRLPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc) 5.6A (Tc) 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 480mOhm @ 3.9A, 10V 600mOhm @ 3.4A, 10V 480mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 18 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 390 pF @ 25 V 350 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 40W (Tc) 2.5W (Ta), 42W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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